Low-temperature polysilicon and product thereof, preparation method and preparation device, and laser component

Abstract

The embodiment of the invention provides a low-temperature polysilicon and a product thereof, a preparation method and a preparation device and a laser component, relates to the technical field of display, and can reduce the leakage current of a thin-film transistor and the number of grain boundaries in the low-temperature polysilicon by increasing the size of the low-temperature polysilicon. Thepreparation method of low-temperature polysilicon comprises the following steps of: forming an amorphous silicon layer on a substrate; as the laser assembly and the substrate gradually move relative to each other in a direction perpendicular to the thickness direction of the substrate, the laser beam emitted by the laser assembly gradually irradiates the amorphous silicon layer on the substrate sothat the region irradiated by the laser beam in the amorphous silicon layer is recrystallized. The energy of the laser beam emitted by the laser assembly within the same period of time varies from large to small along the direction of movement of the substrate relative to the laser assembly.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon and its product, a preparation method, a preparation device, and a laser component. Background technique [0002] When low temperature polysilicon (LTPS) and amorphous silicon (a-Si) are used in the active layer of thin film transistors, low temperature polysilicon has better physical and electrical properties than amorphous silicon. performance. Low-temperature polysilicon can be made directly on the substrate of high-speed complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, referred to as CMOS), that is, GOA circuit, so that the number of pins on the external printed circuit board and the connection of wiring can be reduced. The number of dots reduces the probability of defects in the display panel and improves the durability of the display panel. [0003] In the prior art, methods for producing low-temperature poly...

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Problems solved by technology

However, when low-temperature polysilicon with a large number of grain boundaries is applied to the active layer of a thin film transistor, the greater the number of grain boundaries, the easier it is for the active layer to conduct electricity, thereby increasing the leakage current of the thin film transistor, which in turn leads to the failure of the thin film transistor. Threshold voltage instability degrades electrical performance of thin-film transistors

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