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Low activation voltage resistive device preparing method

A technology for activating voltage and resistive switching devices, which is applied in the field of information storage, can solve the problems of lack of resistive switching characteristics, high defect formation energy, and unsatisfactory resistive switching storage characteristics, etc., to achieve easy repeatable tests, low equipment requirements, and low activation The effect of voltage

Active Publication Date: 2018-08-24
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is found in the research that the dielectric layer materials with low defect formation energy often have unsatisfactory resistive switching storage properties, or even do not have resistive switching properties.
The dielectric layer material with better storage properties often has higher defect formation energy.

Method used

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  • Low activation voltage resistive device preparing method
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  • Low activation voltage resistive device preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Pt / Ti / SiO with a length of 1 cm and a width of 1 cm 2 / Si substrates were cleaned with acetone, isopropanol, and deionized water, and dried for later use.

[0031] Prepare 0.2 mol / L indium nitrate aqueous solution and stir for 24 h before use.

[0032] A certain amount of solid aluminum nitrate was weighed and dissolved in 2.5 ml of hydrogen peroxide (30%) to prepare a 0.2 mol / L aluminum nitrate solution.

[0033] Add 111 μL of ammonia water and 75 μL of nitric acid to the aluminum nitrate solution, and stir for 24 h to obtain a mixed solution of aluminum nitrate.

[0034] Indium nitrate aqueous solution was spin-coated on Pt / Ti / SiO 2 / Si substrate, and then heated on a hot plate for 5 min. This process was repeated 4 times. The samples were then annealed in an annealing furnace at 180 °C for 1 h, and then allowed to cool naturally to room temperature.

[0035] After the sample was taken out, the aluminum nitrate mixed solution was spin-coated on the sample, and th...

Embodiment 2

[0040] Pt / Ti / SiO with a length of 1 cm and a width of 1 cm 2 / Si substrates were cleaned with acetone, isopropanol, and deionized water, and dried for later use.

[0041] Prepare 0.22 mol / L indium nitrate aqueous solution and stir for 24 h before use.

[0042] A certain amount of solid aluminum nitrate was weighed and dissolved in 2.5 ml of hydrogen peroxide (30%) to prepare a 0.18 mol / L aluminum nitrate solution.

[0043] Add 111 μL of ammonia water and 75 μL of nitric acid to the aluminum nitrate solution, and stir for 24 h to obtain a mixed solution of aluminum nitrate.

[0044] Indium nitrate aqueous solution was spin-coated on Pt / Ti / SiO 2 / Si substrate, and then heated on a hot plate for 5 min. This process was repeated 4 times. The samples were then annealed in an annealing furnace at 150 °C for 1 h, and then allowed to cool down to room temperature naturally.

[0045] After the sample was taken out, the aluminum nitrate mixed solution was spin-coated on the sample, a...

Embodiment 3

[0049] Pt / Ti / SiO with a length of 1 cm and a width of 1 cm 2 / Si substrates were cleaned with acetone, isopropanol, and deionized water, and dried for later use.

[0050] Prepare 0.22 mol / L indium nitrate aqueous solution and stir for 24 h before use.

[0051] A certain amount of solid aluminum nitrate was weighed and dissolved in 2.5 ml of hydrogen peroxide (30%) to prepare a 0.2 mol / L aluminum nitrate solution.

[0052] Add 111 μL of ammonia water and 75 μL of nitric acid to the aluminum nitrate solution, and stir for 24 h to obtain a mixed solution of aluminum nitrate.

[0053] Indium nitrate aqueous solution was spin-coated on Pt / Ti / SiO 2 / Si substrate, and then heated on a hot plate for 5 min. This process was repeated 4 times. The samples were then annealed in an annealing furnace at 180 °C for 1 h, and then allowed to cool naturally to room temperature.

[0054] After the sample was taken out, the aluminum nitrate mixed solution was spin-coated on the sample, and t...

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Abstract

The invention relates to the technical field of information storage, and particularly relates to a low activation voltage resistive device preparing method. The method comprises the steps that 1) surface cleaning and pretreatment is carried out on a conductive substrate, and the conductive substrate is stand-by; 2) after growth and heat treatment on the conductive substrate, a dielectric layer S1is acquired; 3) a precursor solution A2 of a dielectric layer S2 is prepared, and a corrosive agent is added to acquire a mixed precursor solution A3; 4) the mixed precursor solution A3 is spin-coatedon the dielectric layer S1, and heat treatment is carried out to acquire a composite dielectric layer S2(1) / S1; and 5) a top electrode is vapor-deposited on the composite dielectric layer S2(1) / S1 tocomplete the preparation. According to the invention, the method is easy to implement, has the advantages of good repeatability and low cost, and can prepare a resistive device with low activation voltage under low temperature and normal pressure conditions; and the method provides a new way for the design and performance optimization of a novel semiconductor storage device, and has an importantprospect in the aspects of electrical modification and orientation control of semiconductor materials.

Description

technical field [0001] The invention relates to the technical field of information storage, and more specifically, to a method for preparing a low activation voltage resistive switch device. Background technique [0002] As a series of products such as mobile phones and tablet computers become more and more popular in our lives, portable electronic products receive more and more attention, and the corresponding market is also unprecedentedly huge. Among them, memory, as the core component of electronic products, plays a very important role in the performance of devices. However, limited by the transistor integration technology and the bottleneck of miniaturization, the current mainstream product flash memory (Flash) in the current market can no longer meet the demand of the market and the semiconductor industry for memory. Therefore, in recent years, many researchers at home and abroad have carried out many researches on next-generation memory. [0003] Resistive memory is...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/021H10N70/041H10N70/011
Inventor 段伟杰裴艳丽饶畅
Owner SUN YAT SEN UNIV
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