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Perovskite structure, electronic device using same, method for producing related photoelectric conversion layer

A perovskite structure and photoelectric conversion layer technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of difficult mass production of perovskite structure

Active Publication Date: 2022-06-28
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current methods for making perovskite structures are difficult to mass-produce

Method used

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  • Perovskite structure, electronic device using same, method for producing related photoelectric conversion layer
  • Perovskite structure, electronic device using same, method for producing related photoelectric conversion layer
  • Perovskite structure, electronic device using same, method for producing related photoelectric conversion layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] A layer of indium tin oxide (ITO) is deposited on a glass substrate. A nickel oxide (NiO) layer was formed by spin coating on the ITO layer. Prepare methylamine bromide (MABr) precursor (eg: Sigma-Aldrich, Methylammoniumbromide) and lead bromide (eg: Sigma-Aldrich, Lead(II) bromide) precursor as an example, with a molar ratio of about 1.07:1 , using a polar solvent to dissolve the two to form a mixed solution of perovskite precursors. A mixed solution of perovskite precursors is spin-coated on the nickel oxide (NiO) layer to form a perovskite precursor layer. Next, place the sample into the reference image 3 In the described vacuuming equipment, the vacuum flashing step is carried out, but is not configured as image 3 The baffle (or baffle 420) is shown. The vacuum flashing step is to use a vacuum device to reduce the pressure in the reaction vessel (not shown) or the chamber 402 from atmospheric pressure to a pressure less than or substantially equal to about 10 ...

Embodiment 2

[0065] Samples were prepared in a manner similar to Example 1, but during the vacuum flashing step, a baffle (or baffle 420) with holes 422 about 1 millimeter (mm) in size was configured in the vacuuming apparatus 400.

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Abstract

A perovskite structure is provided on a substrate. The perovskite structure includes multiple crystal grains. The plurality of grains has a size substantially in the range of 3 microns and 5 microns. The grain material is ABX 3 , wherein A includes at least one of cesium, methylamine, and formamidine, B includes at least one of lead, tin, and germanium, and X includes at least one of chlorine, bromine, and iodine.

Description

technical field [0001] The present invention relates to a perovskite structure, an electronic device using the same, and a manufacturing method of a related photoelectric conversion layer. Background technique [0002] Perovskite materials have unique optoelectronic properties and exhibit excellent efficiencies as structures for photoelectric conversion in many fields. In addition, the perovskite structure has the advantages of less amount of raw materials, easy processing, and low cost. Therefore, many people are currently working on applying it to various photoelectric conversion fields such as displays, light emitting diode devices, solar cells, and the like. However, the current method of fabricating perovskite structures is difficult to mass-produce. SUMMARY OF THE INVENTION [0003] The present invention provides a manufacturing method capable of mass-producing a perovskite structure, and a perovskite structure and electronic device that should be formed by such a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K30/00H10K30/65Y02E10/549
Inventor 蔡旻锦詹钧翔李欣浤范铎正江啟圣蔡庭玮
Owner AU OPTRONICS CORP