Preparation method of material test unit with nanoscale spacing small electrodes for in-situ energization chip for transmission electron microscope
A technology for transmission electron microscopy and material testing, which is applied in the manufacture of electrical components, circuits, and final products. It can solve the problem of large test unit size and achieve controllable electrode spacing and high portability.
Active Publication Date: 2020-01-07
EAST CHINA NORMAL UNIV
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The purpose of the present invention is to provide a method for preparing a material testing unit with nanometer-scale spacing small electrodes for in-situ energization chips for transmission electron microscopy in view of the deficiencies in the prior art. This method solves the problem of directly carrying test materials onto The problem that the size of the formed test unit is too large can well simulate the performance of the test material in the actual device, which provides great convenience for the study of the relationship between the structure and performance of the material
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0026] A method for preparing a material testing unit with nanometer-scale spacing small electrodes for in-situ energization chips of a transmission electron microscope, the specific steps are as follows:
[0027] First, step 1) is implemented to provide a 4-inch silicon wafer substrate, and the silicon wafer substrate is cleaned so as to prepare a high-purity oxide insulating layer in subsequent steps. In this embodiment, the process of cleaning the silicon wafer substrate includes:
[0028] Step 1-1), boil the silicon wafer substrate in a mixed solution of ammonia water, hydrogen peroxide, and deionized water in a volume ratio of 1:2:5 for 5 minutes, rinse with deionized water for 3 minutes after cooling min, then blow dry with nitrogen to remove oil and large particles on the surface of the silicon wafer substrate;
[0029] Step 1-2), boil the silicon wafer substrate in a mixed solution of hydrochloric acid, hydrogen peroxide, and deionized water at a volume ratio of 1:2:5...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a preparation method of a material testing unit for an electrode with a small nanometer-scale space of a TEM in-situ current-carrying chip, wherein the material testing unit iscomposed of a small-sized metal layer, an insulating layer, a test material and a protective layer. The preparation method comprises that: a focused ion beam (FIB) technique is used to etch the metallayer on a SiO2 substrate to obtain a nanometer-scale metal electrode trench; the metal electrode trench is filled with the test material and then covered with the protective layer; a TEM sample is prepared using the FIB; a unit comprising the metal layer and the test material is extracted and transferred to a current-carrying chip to form a material testing unit for an electrode with a small nanometer-scale space; and the in-situ energization of the material testing unit in the TEM is performed. The preparation method can be used for researching the relationship between the microstructure change and the electrical property of the test material.
Description
technical field [0001] The invention belongs to the field of semiconductor device processing, and relates to a preparation method of a material testing unit with nanoscale spacing small electrodes used for in-situ energized chips of a transmission electron microscope. Background technique [0002] Transmission Electron Microscope (TEM) is a precision electron optical instrument that uses electron beams as the light source, electromagnetic coils as magnetic lenses to focus the electron beams, and use the electrons that penetrate the sample to image and obtain atomic-scale structural information of materials. TEM is mainly used in the observation of sample morphology, phase analysis, determination of crystal structure, defect analysis, material composition analysis, element distribution analysis and chemical state analysis. An essential research tool. Focused Ion Beam (FIB) is an ion beam generated by a liquid metal (such as Ga) ion source, which is accelerated and focused by...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/18
CPCH01L31/0216H01L31/0224H01L31/18Y02P70/50
Inventor 成岩黄荣齐瑞娟
Owner EAST CHINA NORMAL UNIV