Solar cell passivation film, rear passivation solar cell and preparation method thereof

A solar cell and backside passivation technology, applied in the field of solar cells, can solve the problems of high cost and difficult passivation film preparation process, and achieve the effects of improving filling factor, lowering the threshold of preparation technology, and improving conversion efficiency.

Inactive Publication Date: 2018-08-31
SHUNDE SYSU INST FOR SOLAR ENERGY
5 Cites 2 Cited by

AI-Extracted Technical Summary

Problems solved by technology

[0012] The first object of the present invention is to provide a kind of solar cell passivation film, to alleviate the partial...
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Method used

[0063] In some embodiments of the present invention, the front side of the battery substrate is provided with a silicon nitride antireflection film. The thickness of the silicon nitride anti-reflection film is about 75nm, and its main functions are: 1) Provide H atoms to saturate the dangling bonds; 2) Play the role of anti-reflection and increase the transmittance of ligh...
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Abstract

The invention provides a solar cell passivation film, a rear passivation solar cell and a preparation method thereof, and relates to the technical field of solar cells. The solar cell passivation filmcomprises a high power function semiconductor material layer and a silicon nitride layer which are arranged in sequence, wherein the high power function semiconductor material layer is used for beingin contact with a cell base. The technical problem that the preparation technology of an Al2O3 passivation film in a local contact solar cell is high in difficulty and high in cost in the prior art can be relieved by using the solar cell passivation film, and the purpose of reducing the difficulty and cost of the technology is reached.

Application Domain

Final product manufacturePhotovoltaic energy generation +1

Technology Topic

Cell basedSilicon nitride +3

Image

  • Solar cell passivation film, rear passivation solar cell and preparation method thereof
  • Solar cell passivation film, rear passivation solar cell and preparation method thereof

Examples

  • Experimental program(6)
  • Comparison scheme(2)
  • Effect test(1)

Example Embodiment

[0072] Example 1
[0073] Such as figure 1 As shown, this embodiment is a back-passivated solar cell, including the following parts:
[0074] 1) P-type silicon wafer 10: resistivity 2Ω·cm, as an absorption layer, converts the photons that meet the conditions into electrons, the size of the P-type silicon wafer is 2×2cm 2;
[0075] 2) n+ diffusion layer 20: also known as emitter, its main function is to form a p-n junction with p-Si to selectively transport electrons, with a depth of about 0.5μm, using POCl 3 As a phosphorus source, it is prepared by diffusion in a tube furnace;
[0076] 3) Silicon nitride anti-reflection film 30: prepared by PECVD deposition, with a thickness of about 75nm;
[0077] 4) Negative electrode 40: obtained by screen printing and high temperature sintering;
[0078] 5) High work function semiconductor material layer 50: Obtained by thermal evaporation, its function is: through work function difference, a p+ layer is introduced into the si material to indirectly provide field passivation; at the same time, it reacts with the Si matrix to form a 1nm layer SiO 2 , Provide chemical passivation;
[0079] The high work function semiconductor material layer in this embodiment is a vanadium oxide layer with a thickness of 9nm, abbreviated as 9nm-V 2 O 5;
[0080] 6) Silicon nitride layer 60: prepared by PECVD deposition with a thickness of 100nm. Its function is mainly to provide H atoms, enhance the chemical passivation of the passivation film, and also reflect long-wavelength photons and play a protective role;
[0081] 7) Back electrode 70: It is a metal electrode, obtained by magnetron sputtering, thermal evaporation or screen printing, and plays a role of transporting holes to an external circuit.

Example Embodiment

[0082] Example 2
[0083] This embodiment is a back-passivated solar cell. Compared with Embodiment 1, the difference is that the high work function semiconductor material layer is different. The high work function semiconductor material layer in this embodiment is 9nm-V 2 O 5 /3nm-WO 3 , The other parts are the same as in Example 1.

Example Embodiment

[0084] Example 3
[0085] This embodiment is a back-passivated solar cell. Compared with Embodiment 1, the difference is that the high work function semiconductor material layer is different. The high work function semiconductor material layer in this embodiment is 9nm-V 2 O 5 /6nm-WO 3 , The other parts are the same as in Example 1.

PUM

PropertyMeasurementUnit
Work function>= 5.0eV
Thickness5.0 ~ 100.0nm
Thickness10.0 ~ 150.0nm

Description & Claims & Application Information

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