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Solar cell passivation film, rear passivation solar cell and preparation method thereof

A solar cell and backside passivation technology, applied in the field of solar cells, can solve the problems of high cost and difficult passivation film preparation process, and achieve the effects of improving filling factor, lowering the threshold of preparation technology, and improving conversion efficiency.

Inactive Publication Date: 2018-08-31
SHUNDE SYSU INST FOR SOLAR ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The first object of the present invention is to provide a kind of solar cell passivation film, to alleviate the partial contact of Al in the prior art solar cell 2 o 3 Passive film preparation process is difficult and costly technical problems

Method used

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  • Solar cell passivation film, rear passivation solar cell and preparation method thereof
  • Solar cell passivation film, rear passivation solar cell and preparation method thereof

Examples

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Embodiment 1

[0073] Such as figure 1 As shown, this embodiment is a rear passivated solar cell, which includes the following parts:

[0074] 1) P-type silicon wafer 10: resistivity 2Ω·cm, as an absorbing layer, converts photons that meet the conditions into electrons, and the size of the P-type silicon wafer is 2×2cm 2 ;

[0075] 2) n+ diffusion layer 20: also known as the emitter, the main function is to form a p-n junction with p-Si to selectively transport electrons, with a depth of about 0.5 μm, using POCl 3 As a phosphorus source, it is prepared by diffusion in a tube furnace;

[0076] 3) Silicon nitride anti-reflection film 30: deposited by PECVD, with a thickness of about 75nm;

[0077] 4) Negative electrode 40: obtained by screen printing and high-temperature sintering;

[0078] 5) High work function semiconductor material layer 50: obtained by thermal evaporation, its function is: through the difference in work function, a p+ layer is introduced into the Si material to indirec...

Embodiment 2

[0083] This embodiment is a back passivated solar cell. Compared with Embodiment 1, the difference lies in that the high work function semiconductor material layer is different. The high work function semiconductor material layer in the present embodiment is 9nm-V 2 o 5 / 3nm-WO 3 , other parts are the same as in Example 1.

Embodiment 3

[0085] This embodiment is a back passivated solar cell. Compared with Embodiment 1, the difference lies in that the high work function semiconductor material layer is different. The high work function semiconductor material layer in the present embodiment is 9nm-V 2 o 5 / 6nm-WO 3 , other parts are the same as in Example 1.

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Abstract

The invention provides a solar cell passivation film, a rear passivation solar cell and a preparation method thereof, and relates to the technical field of solar cells. The solar cell passivation filmcomprises a high power function semiconductor material layer and a silicon nitride layer which are arranged in sequence, wherein the high power function semiconductor material layer is used for beingin contact with a cell base. The technical problem that the preparation technology of an Al2O3 passivation film in a local contact solar cell is high in difficulty and high in cost in the prior art can be relieved by using the solar cell passivation film, and the purpose of reducing the difficulty and cost of the technology is reached.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell passivation film, a rear passivated solar cell and a preparation method thereof. Background technique [0002] Partial contact solar cells are also called PERC solar cells. The cells of this structure currently use Al 2 o 3 / SiNx laminated dielectric passivation film to passivate the back of the battery. al 2 o 3 The passivation principle of SiNx passivation film is different according to different preparation methods and film thickness. For thinner Al 2 o 3 / SiNx stack, the passivation mechanism is through Al 2 o 3 The field passivation provided by the fixed negative charge carried by the layer itself and the H chemical passivation provided by the SiNx layer are superimposed on each other; while for the thicker Al 2 o 3 layer (generally more than 10nm), the preparation method is by PECVD deposition, then the passivation is by Al 2 o 3 The field passiv...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/18Y02E10/50Y02P70/50
Inventor 王学孟刘宗涛吴伟梁包杰
Owner SHUNDE SYSU INST FOR SOLAR ENERGY
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