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Electric field controllable 2D material Schottky diode

A Schottky diode, two-dimensional material technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large parasitic resistance, complex preparation process, limited application, etc., to achieve low cost, simple method, saving occupation effect of space

Active Publication Date: 2018-09-04
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But at present, with the trend of high-density development of electronic devices, the requirements for the space occupied by unit devices are becoming more and more stringent, and the existing Schottky diodes are difficult to meet the needs of high-density development of devices.
In addition, the manufacturing process of the existing Schottky diode is complex, its parasitic resistance is large, and the device cannot be restored to its original state after fabrication, which limits its application

Method used

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  • Electric field controllable 2D material Schottky diode
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] First, silicon is used as the substrate material, and the substrate is cleaned.

[0029] A gold thin film is grown on the substrate layer with a thickness of 100nm.

[0030] Then, a layer of PVDF-TrFE with high dielectric constant was spin-coated on the metal layer with a thickness of 50 nm.

[0031] Afterwards, a single layer of MoTe was prepared by mechanical exfoliation 2 , with a monolayer thickness of 0.7 nm. onto the PVDF-TrFE layer by a transfer technique.

[0032] Then, a layer of multilayer 2D material MoTe was prepared by mechanical exfoliation 2 , with a thickness of 2 nm. It is then transferred on the single-layer MoTe layer by transfer technology.

[0033]A 200nm-thick metal chromium film is then deposited by magnetron sputtering, and then two electrode layers are formed through a lift-off process, thus obtaining a two-dimensional material Schottky diode.

Embodiment 2

[0035] First, silicon is used as the substrate material, and the substrate is cleaned.

[0036] A gold thin film is grown on the substrate layer with a thickness of 100nm.

[0037] Then, a KDP layer with a high dielectric constant is spin-coated on the metal layer, and the thickness of the dielectric layer is 60 nm.

[0038] After that, a single layer of MoTe is directly grown on the dielectric layer by CVD method. 2 , with a monolayer thickness of 0.7 nm. Transferred onto the KDP layer by transfer technology.

[0039] Then, on the single-layer two-dimensional material layer, a layer of multi-layer two-dimensional material MoS is grown by CVD method. 2 , with a multilayer thickness of 2 nm.

[0040] Then deposit a layer of 100nm-thick metal aluminum film by electron beam evaporation, and then make metal to form two electrode layers by lift-off process, that is, obtain a two-dimensional material Schottky diode.

Embodiment 3

[0042] First, silicon is used as the substrate material, and the substrate is cleaned.

[0043] A gold thin film is grown on the substrate layer with a thickness of 80nm.

[0044] Then, deposit a layer of high dielectric constant BaTiO on the metal layer 3 layer, the thickness of the dielectric layer is 40nm.

[0045] Afterwards, a single layer of MoTe was prepared by chemical liquid phase synthesis 2 , with a monolayer thickness of 0.7 nm. transferred to the BaTiO by transfer technique 3 layer.

[0046] Then, a layer of multilayer two-dimensional material WS was prepared by chemical liquid phase synthesis 2 , the multilayer thickness is 3nm. Transferred on the single-layer two-dimensional material layer by transfer technology.

[0047] Then deposit a layer of 100nm-thick metal titanium film by thermal evaporation, and then make metal into two electrode layers through a lift-off process, that is, obtain a two-dimensional material Schottky diode.

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Abstract

The invention relates to an electric field controllable 2D material Schottky diode. The diode comprises a substrate layer, the substrate layer is provided with a metal layer, a high-dielectric-constant material layer and a single 2D semiconductor material layer from bottom to top successively, the two ends of the single 2D semiconductor material layer are provided with a metal electrode A and a metal electrode B, part of the rear of the upper portion of the single 2D semiconductor material layer is provided with a multilayer 2D semiconductor material layer, and the multilayer 2D semiconductormaterial layer makes contact with the metal electrode B. Compared with the prior art, the Schottky diode saves the occupation space of a unit device, and is helpful for development towards high density of the device; a polarized electric field of an applied electric field induction ferroelectric material excites a lot of carriers and enables phase change of the 2D material, and a phase change induction method is simple, controllable and low in cost; when the electric field is applied, the phase of the single layer 2D material changes from a semiconductor to metal, and contact between the metalelectrode and the single layer 2D semiconductor material is changed into ohmic contact, and the parasitic resistance of the Schottky diode is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a two-dimensional material schottky diode with controllable electric field. Background technique [0002] Schottky diodes (also known as SBDs) are widely used in power management integrated circuits to improve power conversion efficiency due to the advantages of having a large number of conductive carriers and low turn-on voltage under forward bias. Schottky diodes utilize a metal-semiconductor junction, which provides a Schottky barrier and is created between a metal layer and a doped semiconductor layer. For a Schottky diode with an N-type semiconductor layer, the metal layer acts as the anode, and the N-type semiconductor layer acts as the cathode. In general, Schottky diodes behave like traditional p-n diodes by easily passing current in the forward biased direction and blocking current in the reverse biased direction. Schottky diodes are majority carrier devices and do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/24
CPCH01L29/24H01L29/872
Inventor 汤乃云王倩倩单亚兵杜琛徐浩然
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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