A kind of preparation method of thin film heterostructure

Abstract

The invention provides a method for preparing a thin-film heterostructure, comprising the steps of: providing a wafer substrate with an implanted surface; performing ion implantation on the wafer substrate on the self-implanted surface, and forming a wafer substrate at a predetermined depth in the wafer substrate. Implant defect layer; provide support substrate, heat up the support substrate and wafer substrate; anneal the obtained structure to form a continuous defect layer; reduce the obtained structure to a preset temperature to generate The reverse thermal stress peels off part of the wafer substrate along the continuous defect layer to obtain a thin film heterostructure including the supporting substrate and the wafer film, and the preset temperature is lower than the bonding temperature. The present invention can reduce the thermal strain of the bonded structure by heating up the bonding method, so that the bonded structure remains stable and complete in the high-temperature process, effectively avoiding the split problem caused by thermal mismatch during the peeling process. The thermal stress-assisted method separates the bonded structure at the continuous defect layer without affecting the bonding interface.

Description

technical field [0001] The invention belongs to the technical field of substrate preparation, in particular to a method for preparing a thin film heterostructure. Background technique [0002] With the advent of 5G communications and the development of the Internet of Everything (IOE), the chip technology commonly used in the past can no longer meet people's requirements for high performance, high integration and low power consumption. At this time, people are required to integrate chips with various functions. [0003] According to different material properties, chips based on different materials have their own advantages. For example, silicon chips have the advantages of high integration, gallium arsenide chips have the advantages of high speed and high frequency, gallium nitride chips have the advantages of high power, piezoelectric chips It is widely used in filters of radio frequency systems. To this end, Northrop Grumman Aerospace Sector in the United States integrat...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a thin-film heterogeneous structure, which is used to solve the problem of the thermal strain of the thin-film heterogeneous substrate at high temperature in the prior art, so that high-temperature processes cannot be performed. And how to use auxiliary means to lift off the material to obtain the completed thin film heterogeneous substrate

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