Preparation method of g-C3N4/MXene composite material

Abstract

The invention relates to a preparation method of a g-C3N4 / MXene composite material. The preparation method comprises the following steps of preparing an MXene material, preparing a mixture of MXene and g-C3N4 precursor matters, and preparing the g-C3N4 / MXene composite material. The preparation method has the advantages that the preparation method is simple, the technology parameters are easy to control, the cost is low, and the large-scale industrialized production is easy to implement; the prepared g-C3N4 / MXene composite material has good crystallizing property, fine particles, uniform distribution, large specific surface area, good conductivity, good photocatalysis property, good biophile property, and application value in the fields of photocatalysis, wastewater treatment, biological sensors and the like.

Description

technical field

[0001] The invention belongs to the field of preparation of nano functional materials, in particular to a g-C 3 N 4 / MXene composites preparation method. Background technique

[0002] Semiconductor photocatalysis has shown great potential in solving energy shortage and environmental pollution, and has been highly valued by governments of all countries. Therefore, the development of new and efficient photocatalysts has become an inevitable demand for the development of photocatalytic technology.

[0003] In recent years, a new type of non-metallic material g-C 3 N 4 , has received extensive attention due to its narrow band gap (about 2.7eV), good chemical stability, and simple preparation method. So far, no naturally occurring g-C has been found in nature 3 N 4 Crystal, g-C 3 N 4 Mainly rely on experimental synthesis, synthetic g-C 3 N 4 Precursors generally use nitrogen-rich compounds such as urea, thiourea, cyanamide, melamine, etc. But the synth...

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