LED with photonic crystal structure

Abstract

The invention relates to an LED with a photonic crystal structure. The LED comprises a nano graphical sapphire substrate, a non-doped GaN layer, an n type GaN layer, a multi-quantum well active region, a p type AlGaN electron barrier layer, a p type GaN ohmic contact layer and an ITO layer arranged successively from bottom to top, the LED further comprises a p type ohmic electrode led out of the ITO layer and an n type ohmic electrode led out of the n type GaN layer, and the reflective photonic crystal structure is prepared on the non-doped GaN layer. The LED has the advantages that the nano graphical sapphire substrate can reduce dislocation and defect density of a material, and improve the internal quantum efficiency of the LED, and the production cost can be further reduced due to reduced graph sizes; the reflective photonic crystal structure prepared in the non-doped GaN layer can reflect light irradiated on the substrate to the light output side, light loss is avoided, and the utilization rate of light is improved; and the light emitting efficiency and brightness of the LED can be improved effectively.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a light-emitting diode (LED) with a photonic crystal structure, which is a manufacturing technology for improving the light extraction efficiency of the LED by using the band gap effect of the photonic crystal. Background technique [0002] LED has the advantages of high brightness, low power consumption, long life, fast startup, low power, no flicker, and is not easy to cause visual fatigue. It has a wide range of applications, covering LED displays, traffic lights, car lights, LCD backlights, flashlights, Decorative lighting, street lighting and general lighting and other fields. [0003] Sapphire has the advantages of stable chemical and physical properties, good light transmission, and reasonable cost, so it is widely used as the epitaxial substrate of GaN-based light-emitting diodes. However, the lattice constant mismatch (16%) and thermal expansion coeff...

AI Technical Summary

Problems solved by technology

However, since the light emitted from the LED to the substrate has not been effectively utilized, this method has no obvious effect on improving the luminous power of the LED.

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