High gain V wave band power amplifier based on genetic algorithm optimization

Abstract

The invention discloses a high gain V wave band power amplifier based on genetic algorithm optimization. The power amplifier comprises two stages of pseudo differential common source structures whichare in tandem connection successively, and the pseudo differential common-source amplifier structures adopt the cross coupling capacitance neutralization technology; the input-stage matching network adopts a series capacitance shunt inductance mode; two stages of amplifiers directly adopt a capacitance direct coupling link for matching. A shunt inductance is adopted in the input-stage matching network so that matching network loss can be reduced; in addition, the cross coupling capacitance neutralization is adopted to improve power gain, improve circuit reverse isolation and stability, and achieve high gain under the circumstance of not increasing extra power dissipation. In order to solve the center frequency and matching performance deviation theoretical value caused by element parasitism, the genetic algorithm is adopted to slightly adjust sizes of passive devices (inductances) and CMOS transistors so that the circuit can reach the optimum performance under the parasitic effect influence. The circuit designed by the power amplifier is simple in structure and easy to design and implement.

Description

technical field [0001] The invention belongs to the field of electronic technology and relates to the design of a microwave power amplifier, in particular to a high-gain V-band power amplifier designed based on a 90nm CMOS process with a cross-coupling capacitor structure and optimized by a genetic algorithm. It should be noted that the design method of the microwave power amplifier involved in this invention is not limited to the 90nm CMOS process, but is also applicable to other deep submicron CMOS process technology nodes. Background technique [0002] At present, because the power amplifier using the RF_CMOS process has the characteristics of high integration and easy combination with the baseband CMOS circuit, and with the advancement of deep submicron CMOS process technology, the characteristic frequency of the RF_CMOS transistor exceeds 100GHz, so the microwave power based on RF_CMOS technology The design of amplifiers has received more and more attention. However, t...

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Problems solved by technology

The disadvantage of the first solution is that the Q value of passive components in the existing component library is low; the disadvantage of the second solution is that the loss is large and the area is large; the third solution can reduce the area, but the loss is still large

[0006] Finally, due to the increase of the parasitic effect of the components in the millimeter wave frequency band, the center frequency band of the circuit and the matching performance deviate from the theoretical analysis

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