GaN-based HEMT device

Abstract

The invention discloses a GaN-based HEMT device. On the premise of no influence on reliability of the device, the source-drain parasitic resistance is reduced, the conduction resistance of the GaN-based HEMT device is reduced, and the GaN-based HEMT device works at a low voltage. The GaN-based HEMT device comprises a gate electrode, a source electrode, a drain electrode, a substrate, a buffer layer, a GaN channel layer, a first barrier layer, a second barrier layer and a dielectric passivation layer, wherein the substrate, the buffer layer, the GaN channel layer, the first barrier layer, the second barrier layer and the dielectric passivation layer are sequentially laminated from bottom to top, an N-type ion injection region is formed in the GaN channel layer and the first barrier layer, the source electrode and the drain electrode are formed on an upper surface of the N-type ion injection region, the gate electrode is formed on an upper surface of the first barrier layer and is arranged between the source electrode and the drain electrode, and the dielectric passivation layer is arranged in a way encircling the gate electrode so that the gate electrode is isolated from the N-typeion injection region.

Description

Technical field [0001] The invention belongs to the field of semiconductor devices, and specifically relates to a GaN-based HEMT device. Background technique [0002] The wide bandgap semiconductor gallium nitride material has the characteristics of large forbidden band width, high critical breakdown electric field and high electron saturation speed, and has become an ideal material for a new generation of semiconductor power devices. In recent years, the GaN-based HEMT device structure represented by Al(ln, Ga, Sc)N / GaN has generated high two-dimensional electron gas through spontaneous polarization and piezoelectric polarization, and has become the mainstream GaN-based HEMT device material structure . [0003] At present, the main application areas of GaN devices are high-frequency, high-voltage and high-power integrated circuits. The high forbidden band width of GaN materials and high two-dimensional electron gas concentration are mainly used to improve device performance. How ...

AI Technical Summary

Problems solved by technology

However, for GaN devices, simply reducing the source-drain spacing will conflict with the high-temperature alloy process of the device. If the alloy temperature is too high, the metal diffusion morphology in the alloy junction will be uneven and smooth. If the source-drain spacing is too small, it is easy to Causes source-drain punch-through phenomenon, causing failure of GaN devices

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