Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crucible using silicon nitride film as resisting layer and used for pseudo-single crystal silicon cast ingot

A technology of silicon nitride film and quasi-single crystal silicon, which is applied in the field of crucibles for quasi-single crystal silicon ingot casting, can solve the problems of increasing the cost of ingot casting and the limited effect of the width of the red zone at the bottom of the silicon ingot, and achieves improved utilization rate, The red zone width is low and the effect of increasing the minority carrier lifetime

Inactive Publication Date: 2018-11-02
ZHEJIANG UNIV
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the effect of reducing the width of the red zone at the bottom of the silicon ingot is relatively limited, and the use of high-purity materials increases the cost of ingot casting

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crucible using silicon nitride film as resisting layer and used for pseudo-single crystal silicon cast ingot
  • Crucible using silicon nitride film as resisting layer and used for pseudo-single crystal silicon cast ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Provide a crucible with an inner diameter of 175*175mm and a height of 190mm, and coat the inner bottom of the crucible with a silicon nitride coating;

[0027] (2) On a solar-grade monocrystalline silicon wafer with a thickness of 0.2mm and a specification of 170*170mm;

[0028] (3) Deposit a silicon nitride film with a thickness of 100nm on the above-mentioned solar-grade monocrystalline silicon wafer by PECVD method, and paste it on the inner bottom of the crucible through high-purity silica sol,

[0029] Among them, the process parameters of PECVD method are: deposition temperature is 350°C, deposition time is 10min, deposition pressure is 120Pa, radio frequency power is 20W, total gas flow rate is 3400sccm;

[0030] Wherein, the volume ratio of ammonia and silane is 10:1;

[0031] (4) Then set the seed crystal on the bottom barrier layer of the quasi-single crystal silicon ingot crucible using the silicon nitride film as the barrier layer, and then set the sil...

Embodiment 2

[0035] (1) Provide a crucible with an inner diameter of 175*175mm and a height of 190mm, and coat the inner bottom of the crucible with a silicon nitride coating;

[0036] (2) On a solar-grade monocrystalline silicon wafer with a thickness of 0.2mm and a specification of 170*170mm;

[0037] (3) Deposit a 100nm silicon nitride film with a thickness of 100nm by PECVD on the above-mentioned solar-grade monocrystalline silicon wafer, and paste it on the inner bottom of the crucible through high-purity silica sol;

[0038] Among them, the process parameters of PECVD method are: deposition temperature is 400°C, deposition time is 6min, deposition pressure is 180Pa, radio frequency power is 40W, total gas flow rate is 4500sccm;

[0039] Wherein, the volume ratio of ammonia and silane is 6:1;

[0040] (4) Then set the seed crystal on the bottom barrier layer of the quasi-single crystal silicon ingot crucible using the silicon nitride film as the barrier layer, and then set the silico...

Embodiment 3

[0044] (1) Provide a crucible with an inner diameter of 175*175mm and a height of 190mm, and coat the inner bottom of the crucible with a silicon nitride coating;

[0045] (2) On a solar-grade monocrystalline silicon wafer with a thickness of 0.2mm and a specification of 170*170mm;

[0046] (3) Deposit a silicon nitride film with a thickness of 200nm on the above-mentioned solar-grade monocrystalline silicon wafer by PECVD method, and paste it on the inner bottom of the crucible through high-purity silica sol;

[0047] Among them, the process parameters of PECVD method are: deposition temperature is 450°C, deposition time is 12min, deposition pressure is 160Pa, radio frequency power is 30W, total gas flow rate is 4000sccm;

[0048] Wherein, the volume ratio of ammonia and silane is 8:1;

[0049] (4) Then set the seed crystal on the bottom barrier layer of the quasi-single crystal silicon ingot crucible using the silicon nitride film as the barrier layer, and then set the sili...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a crucible using a silicon nitride film as a resisting layer and used for a pseudo-single crystal silicon cast ingot. The crucible is characterized in that a silicon nitride coating layer and a resisting layer are arranged on the inner surface of a base, wherein the resisting layer is a solar single crystal silicon substrate of which the surface is deposited with an Si3N4 film through a plasma reinforced chemical vapor deposition method. According to the crucible, the width of a red area at the bottom part of the casted pseudo-single crystal silicon cast ingot is limited to be about 5 mm, and the service life of a minority carrier of the cast ingot is beyond 2 microseconds, so that the utilization rate of the pseudo-single crystal silicon cast ingot is effectively increased; the pseudo-single crystal silicon cast ingot is cut into silicon sheets which are low in impurity concentration; the service life of the minority carrier of each silicon sheet is long; the efficiency of a manufactured battery is high; and the average conversion efficiency is 18%-18.5%.

Description

technical field [0001] The invention belongs to the field of quasi-single-crystal silicon ingots, and in particular relates to a crucible for quasi-single-crystal silicon ingots using a silicon nitride film as a barrier layer. Background technique [0002] As a renewable clean energy, solar energy has been widely used in grid-connected power generation, civil Power generation, public facilities and integrated energy-saving buildings. In the field of solar power generation, crystalline silicon photovoltaic power generation systems occupy a major position in the new energy photovoltaic power generation market. The market has increasingly stringent requirements on the quality of mono / polysilicon, the raw material that affects photovoltaic power generation. [0003] In the current quasi-single crystal casting / polycrystalline casting process, impurities in the crucible such as iron, oxygen, carbon, etc. will diffuse into the silicon ingot at high temperature, and metal impuriti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/14C30B29/06
CPCC30B13/14C30B29/06
Inventor 余学功胡泽晨杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com