Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Groove-type IGBT device with shield grid

A shielded gate, trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as irreversible damage, and achieve the effect of reducing switching loss, reducing capacitance, device input capacitance and feedback capacitance.

Pending Publication Date: 2018-11-06
JIANGSU CAS JUNSHINE TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the bottom of the trench in the dummy trench structure is the electric field concentration point of the device. If no protection is done, the breakdown will first occur at the bottom of the trench, causing irreversible damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Groove-type IGBT device with shield grid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0025] Such as figure 1 Shown: in order to improve the withstand voltage of the device, reduce the parasitic capacitance of the device, and reduce the switching loss, taking the N-type IGBT device as an example, the present invention includes a semiconductor substrate and a cell region located at the center of the semiconductor substrate, and the semiconductor substrate includes N -type epitaxial layer 9 and the P-type base region 6 located in the upper part of the N-type epitaxial layer 9;

[0026] The cell area includes several cells, and each cell includes two cell grooves, the cell grooves are located in the P-type base region 6 and the depth of the cell grooves extends into the bottom of the P-type base region 6 In the N-type epitaxial layer 9;

[0027] On the cross-section of the IGBT device, a P-type implantation region 7 is set between two cell trench...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a groove-type IGBT device with a shield grid. On the cross section of the IGBT device, a second conductive type injection area is arranged between two cell grooves in a cell;a field oxide layer and a shield grid polycrystalline silicon wrapped in the field oxide layer are arranged above a first conductive type epitaxial layer, the shield grid polycrystalline silicon is positioned right above the second conductive type injection area, and the shield grid polycrystalline silicon is insulated and isolated from the second conductive type injection area via the field oxidelayer; control grid polycrystalline silicon is filled into the cell grooves, the control grid polycrystalline silicon is insulated and isolated from the side wall and bottom wall of the cell groovesvia control grid oxide layers within the cell grooves, the control grid polycrystalline silicon also covers the field oxide layer, and the control grid polycrystalline silicon is overlapped with the shield grid polycrystalline silicon in the field oxide layer. The groove-type IGBT device provided by the invention is compact in structure, improved in voltage tolerance of device, reduced in stray capacitance of the device, lowered in switch loss, safe and reliable.

Description

technical field [0001] The invention relates to a trench type IGBT device, in particular to a trench type IGBT device with a shielding gate, belonging to the technical field of IGBT devices. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a new type of power electronic device combined with MOS field effect and bipolar transistor. The advantage of simple control circuit, and the advantages of low conduction voltage of power transistor, bipolar conduction, large on-state current and small loss, have become one of the core electronic components in modern power electronic circuits, and are widely used in such as energy , transportation, household appliances and aerospace and other fields of the national economy. [0003] Compared with the planar gate IGBT, the trench gate IGBT has a trench structure that increases the channel density, thereby increasing the saturation current density accordingly, so the short circuit tolerance of the trench gate IGBT i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/06H01L29/417H01L29/423H01L29/739
CPCH01L29/0649H01L29/41741H01L29/42312H01L29/7397H01L29/7398Y02B70/10
Inventor 李哲锋许生根姜梅
Owner JIANGSU CAS JUNSHINE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com