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Film with room temperature phosphorescence and preparation method thereof

A technology for room temperature phosphorescence and thin film preparation, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of long afterglow luminescence, high quantum yield, and difficulty in application, and achieve simple preparation methods, low synthesis temperature, and stability Good results

Active Publication Date: 2018-11-23
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the phosphorescence of these materials is very weak at room temperature, and it is difficult to be applied in practice.
Therefore, it remains a great challenge to develop thin-film phosphorescent materials with long afterglow luminescence, high quantum yield, and solution processability.

Method used

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  • Film with room temperature phosphorescence and preparation method thereof
  • Film with room temperature phosphorescence and preparation method thereof
  • Film with room temperature phosphorescence and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1: (RCH 2 CH 2 NH 3 ) 1.9 (R'CH 2 CH 2 NH 3 ) 0.1 PbBr 4 preparation of

[0024] 767.6 mg (3.8 mmol) of phenethylammonium bromide salt RCH 2 CH 2 NH 3 Br and 64.2 mg (0.2 mmol) of N -(2-aminoethyl)naphthalimide hydrobromide R'CH 2 CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 3000R / min, the spin-coating time was 30s, and after drying in a vacuum oven at 100°C for 10 minutes, the obtained Room-temperature phosphorescent films (RCH 2 CH 2 NH 3 ) 1.9 (R'CH 2 CH 2 NH 3 ) 0.1 PbBr 4 . It appears light blue under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 5.8ms, and the quantum yield is 5.5%. Its luminescence spectrum is attached figure 1 As shown, the luminescence lifetime spectrum is attached figu...

Embodiment 2

[0025] Embodiment 2: (RCH 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 PbBr 4 preparation of

[0026] 626.2 mg (3.1 mmol) of phenethylammonium bromide salt RCH 2 CH 2 NH 3 Br and 282.48 mg (0.88 mmol) of N -(2-aminoethyl)naphthalimide hydrobromide R'CH 2 CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 3200R / min, the spin-coating time was 30s, and after drying in a vacuum oven at 95°C for 18 minutes, the obtained Room-temperature phosphorescent films (RCH 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 PbBr 4 . It appears yellow under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 4.6ms, and the quantum yield is 11.4%.

[0027] The film (RCH) prepared in this embodiment 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 Pb...

Embodiment 3

[0028] Embodiment 3: (RCH 2 NH 3 ) 1.6 (R'CH 2 NH 3 ) 0.4 PbBr 4 preparation of

[0029] 601.6 mg (3.2 mmol) of benzyl ammonium bromide salt RCH 2 NH 3 Br and 245.6 mg (0.8 mmol) of N -(2-aminomethyl)naphthalimide hydrobromide R'CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 2900R / min, the spin-coating time was 28s, and after drying in a vacuum oven at 100°C for 10 minutes, the obtained Room-temperature phosphorescent films (RCH 2 NH 3 ) 1.6 (R'CH 2 NH 3 ) 0.4 PbBr 4 . It appears light yellow under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 5.7ms, and the quantum yield is 9%.

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Abstract

The invention relates to a film with room temperature phosphorescence and a preparation method thereof. The method is mainly characterized in that alkyl halogenated amine salt containing naphthalimides is doped into benzene alkyl halogenated amine salt; self assembly is performed with lead halide in organic solvents; next, film forming is performed by a solution method. The obtained organic and inorganic hybrid perovskite film containing naphthalimides has the monomolecular room temperature phosphorescence; in addition, the phosphorescence quantum yield is high; the rotary coating film formingcan be realized. By changing the types of the perovskite halogen atoms, the luminescence of the film can also be regulated to become from the emission of single phosphorescence into the simultaneousemission of fluorescence and phosphorescence. The perovskite film material also has the advantages that the preparation method is simple; the synthesis temperature is low; the stability is high, and the like. The material is suitable for industrial production, has practicability and has wide application prospects in the fields of safe ink, anti-counterfeiting recognition and the like.

Description

technical field [0001] The invention relates to a thin film with room temperature phosphorescence and a preparation method thereof, in particular to an organic-inorganic hybrid perovskite thin film based on a naphthalimide luminescent group and a preparation method thereof. Background technique [0002] Due to the long-lived triplet excited state and long exciton migration distance, organic room-temperature phosphorescent materials have broad application prospects in the fields of organic optoelectronics, chemical and biological sensors, bioimaging, photodynamic therapy, molecular logic operations, and anti-counterfeiting technology. The organic room-temperature phosphorescence developed in recent years is often realized by crystallization-induced phosphorescence or through host-guest interaction. These room-temperature phosphorescent materials usually require the formation of high-quality crystal structures and precisely designed host-guest structures, which limits their dev...

Claims

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Application Information

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IPC IPC(8): C09K11/06C09K11/02C09K11/72
CPCC09K11/025C09K11/06C09K11/72
Inventor 林正欢凌启淡杨书明
Owner FUJIAN NORMAL UNIV
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