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Thin film with room temperature phosphorescence and preparation method thereof

A room temperature phosphorescence, thin film preparation technology, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of long afterglow luminescence, high quantum yield, difficult application, etc., and achieves simple preparation method, low synthesis temperature, and stability. Good results

Active Publication Date: 2021-02-12
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the phosphorescence of these materials is very weak at room temperature, and it is difficult to be applied in practice.
Therefore, it remains a great challenge to develop thin-film phosphorescent materials with long afterglow luminescence, high quantum yield, and solution processability.

Method used

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  • Thin film with room temperature phosphorescence and preparation method thereof
  • Thin film with room temperature phosphorescence and preparation method thereof
  • Thin film with room temperature phosphorescence and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1: (RCH 2 CH 2 NH 3 ) 1.9 (R'CH 2 CH 2 NH 3 ) 0.1 PbBr 4 preparation of

[0024] 767.6 mg (3.8 mmol) of phenethylammonium bromide salt RCH 2 CH 2 NH 3 Br and 64.2 mg (0.2 mmol) of N -(2-aminoethyl)naphthalimide hydrobromide R'CH 2 CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 3000R / min, the spin-coating time was 30s, and after drying in a vacuum oven at 100°C for 10 minutes, the obtained Room-temperature phosphorescent films (RCH 2 CH 2 NH 3 ) 1.9 (R'CH 2 CH 2 NH 3 ) 0.1 PbBr 4 . It appears light blue under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 5.8ms, and the quantum yield is 5.5%. Its luminescence spectrum is attached figure 1 As shown, the luminescence lifetime spectrum is attached fi...

Embodiment 2

[0025] Embodiment 2: (RCH 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 PbBr 4 preparation of

[0026] 626.2 mg (3.1 mmol) of phenethylammonium bromide salt RCH 2 CH 2 NH 3 Br and 282.48 mg (0.88 mmol) of N -(2-aminoethyl)naphthalimide hydrobromide R'CH 2 CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 3200R / min, the spin-coating time was 30s, and after drying in a vacuum oven at 95°C for 18 minutes, the obtained Room-temperature phosphorescent films (RCH 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 PbBr 4 . It appears yellow under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 4.6ms, and the quantum yield is 11.4%.

[0027] The film (RCH) prepared in this embodiment 2 CH 2 NH 3 ) 1.56 (R'CH 2 CH 2 NH 3 ) 0.44 Pb...

Embodiment 3

[0028] Embodiment 3: (RCH 2 NH 3 ) 1.6 (R'CH 2 NH 3 ) 0.4 PbBr 4 preparation of

[0029] 601.6 mg (3.2 mmol) of benzyl ammonium bromide salt RCH 2 NH 3 Br and 245.6 mg (0.8 mmol) of N -(2-aminomethyl)naphthalimide hydrobromide R'CH 2 NH 3 Br was dissolved in 10 mL of N,N-dimethylformamide, and then 734 mg (2 mmol) of lead bromide PbBr was added 2 , stirred evenly to obtain a mixed solution, and the obtained mixed solution was spin-coated on a glass sheet to form a film, the spin-coating rate was 2900R / min, the spin-coating time was 28s, and after drying in a vacuum oven at 100°C for 10 minutes, the obtained Room-temperature phosphorescent films (RCH 2 NH 3 ) 1.6 (R'CH 2 NH 3 ) 0.4 PbBr 4 . It appears light yellow under a 365nm ultraviolet lamp, the lifetime of phosphorescence is 5.7ms, and the quantum yield is 9%.

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Abstract

The invention relates to a thin film with room temperature phosphorescence and a preparation method thereof. The method is mainly obtained by doping an alkyl amine halide salt containing naphthalimide into a phenylalkyl amine halide salt, self-assembling with lead halide in an organic solvent, and then forming a film by a solution method. The organic-inorganic hybrid perovskite thin film containing naphthalimide obtained by the invention has single-molecule room-temperature phosphorescence, high phosphorescence quantum yield, and can be spin-coated to form a film. By changing the type of perovskite halogen atoms, it is also possible to adjust the luminescence of the film from emitting a single phosphorescence to emitting both fluorescence and phosphorescence. The perovskite film material of the invention also has the advantages of simple preparation method, low synthesis temperature, good stability, etc., is suitable for industrial production, has practicability, and has broad application prospects in the fields of security ink, anti-counterfeiting identification and the like.

Description

technical field [0001] The invention relates to a thin film with room temperature phosphorescence and a preparation method thereof, in particular to an organic-inorganic hybrid perovskite thin film based on a naphthalimide luminescent group and a preparation method thereof. Background technique [0002] Due to the long-lived triplet excited state and long exciton migration distance, organic room-temperature phosphorescent materials have broad application prospects in the fields of organic optoelectronics, chemical and biological sensors, bioimaging, photodynamic therapy, molecular logic operations, and anti-counterfeiting technology. The organic room-temperature phosphorescence developed in recent years is often realized by crystallization-induced phosphorescence or through host-guest interaction. These room-temperature phosphorescent materials usually require the formation of high-quality crystal structures and precisely designed host-guest structures, which limits their dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/06C09K11/02C09K11/72
CPCC09K11/025C09K11/06C09K11/72
Inventor 林正欢凌启淡杨书明
Owner FUJIAN NORMAL UNIV
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