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A preparation method of an alloy target forming ohmic contact on the surface of n-type gallium arsenide

An ohmic contact, alloy target technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of poor processing performance, unfavorable high-performance thin film, high alloy brittleness, etc., to achieve good plasticity, increase The effect of nucleation capacity

Active Publication Date: 2020-08-14
江苏环奥金属材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although good results have been achieved, there are still some problems in the preparation of ohmic contacts with gold-germanium alloys: (1) First, when processing gold-germanium alloys to prepare sputtering targets, it is found that the alloy is brittle and has poor processing performance. poor
Usually, the method of preparing gold-germanium alloy sputtering target is to cast ingots with similar specifications to the target material. The microstructure of the gold-germanium alloy target material thus obtained is the hypoeutectic or eutectic structure in the as-cast state, which is not conducive to obtaining the final high performance film

Method used

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  • A preparation method of an alloy target forming ohmic contact on the surface of n-type gallium arsenide
  • A preparation method of an alloy target forming ohmic contact on the surface of n-type gallium arsenide

Examples

Experimental program
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Effect test

Embodiment 1

[0022] The target material is mixed with 2 wt% gold and 98 wt% indium, and the preparation method includes the following steps:

[0023] 1) Use a vacuum induction melting furnace to melt metal indium (in a vacuum induction melting furnace with a vacuum degree of 8 Pa, heat the indium raw material to 200 ° C, and keep it warm for 30 minutes after the indium metal is completely melted), and then gold nano The powder (10-100nm) is mixed into the metal indium in the molten state and stirred evenly;

[0024] 2) When the melt is stirred, keep warm and degas for 15 minutes;

[0025] 3) Pour the indium-gold mixture into the casting mold at a temperature of 180°C, and cool it to room temperature (15-30°C) to form an indium-gold alloy ingot with eutectic composition or hypoeutectic composition;

[0026] 4) The ingot is subjected to hot pressing and rolling (45°C, the deformation rate of the hot rolling pass is 3%), and the internal pores and grain boundaries are removed;

[0027] 5) U...

Embodiment 2

[0031] The target material is mixed with 8 wt% gold and 92 wt% indium, and the preparation method includes the following steps:

[0032] 1) Use a vacuum induction melting furnace to melt metal indium (in a vacuum induction melting furnace with a vacuum degree of 12Pa, heat the indium raw material to 220°C, and keep it warm for 40 minutes after the indium metal is completely melted), and then gold nano powder Mixed into the metal indium in the molten state and stirred evenly;

[0033] 2) When the melt is stirred, keep warm and degas for 20 minutes;

[0034] 3) Pour the indium-gold mixture into the casting mold at a temperature of 220°C, and cool to room temperature to form an indium-gold alloy ingot with eutectic composition or hypoeutectic composition;

[0035] 4) The ingot is subjected to hot pressing and rolling (55°C, the deformation rate of the hot rolling pass is 8%), and the internal pores and grain boundaries are removed;

[0036] 5) Use a heating furnace to homogeniz...

Embodiment 3

[0040] The target material is mixed with 5 wt% gold and 95 wt% indium, and the preparation method includes the following steps:

[0041] 1) Use a vacuum induction melting furnace to melt metal indium (in a vacuum induction melting furnace with a vacuum degree of 10 Pa, heat the indium raw material to 210 ° C, and keep it warm for 32 minutes after the indium metal is completely melted), and then gold nano The powder is mixed into the metal indium in the molten state and stirred evenly;

[0042] 2) When the melt is stirred, keep warm and degas for 18 minutes;

[0043] 3) Pour the indium-gold mixture into the casting mold at a temperature of 200°C, and cool it to room temperature to form an indium-gold alloy ingot with eutectic composition or hypoeutectic composition;

[0044] 4) The ingot is subjected to hot pressing and rolling (50°C, the deformation rate of the hot rolling pass is 5%), and the internal pores and grain boundaries are removed;

[0045] 5) Use a heating furnace...

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Abstract

The invention discloses an alloy target material for forming ohmic contact on the surfaces of N-shaped compound semiconductor materials and a preparing method of the alloy target material, and particularly relates to an indium-gold alloy target material for forming ohmic contact on the surfaces of N-shaped compound semiconductor materials and a preparing method of the indium-gold alloy target material. The indium-gold alloy target material good in adhesiveness and plasticity and simple in preparing method and the preparing method of the indium-gold alloy target material are provided. Comparedwith a gold-germanium alloy, good ohmic contact can be directly formed on the surface of gallium arsenide through the indium-gold alloy target material. Meanwhile, the percentage elongation after fracture of the indium-gold alloy prepared through the preparing method can reach 23.5%-30%, plasticity is good, and needed shapes can be machined according to needs of different occasions.

Description

technical field [0001] The invention relates to a method for preparing an alloy target, in particular to an indium-gold alloy target which forms an ohmic contact on the surface of an N-type compound semiconductor material and a preparation method thereof. Background technique [0002] Excellent metal-semiconductor ohmic contact is very important for the manufacture of optoelectronic devices with compound semiconductors, the parameters and stability of microwave oscillators and microwave circuits. For gallium arsenide (GaAs) materials, gold-germanium (AuGe) alloys are generally used to form good ohmic contacts. Contact, the preparation process is to vapor-deposit AuGe eutectic on GaAs, and use rapid annealing technology for alloying. During the alloying process, Ge (germanium) quickly diffuses to heavily N-type doped GaAs, forming an electron tunnel between the metal and the semiconductor without generating a potential barrier. At present, under the optimal process, the spec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C22C28/00C22C1/02C22F1/16
CPCC22C1/02C22C28/00C22F1/16C23C14/185C23C14/3407C23C14/3414C23C14/35
Inventor 不公告发明人
Owner 江苏环奥金属材料科技有限公司
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