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A ZnO/Si nano/micro column array sensitive material, a preparing method thereof and a sensor

An array sensor and sensitive material technology, applied in the direction of analyzing materials, material resistance, material analysis through electromagnetic means, etc., can solve problems such as poor quality of ZnO crystals, and achieve the effect of improving overall performance and sensitivity

Active Publication Date: 2018-12-07
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The minimum detection limit of the existing Au / ZnO nanocolumn array sensor is 10ppm, which is obviously better than the Si nanocolumn array sensor. However, the uniformity of this type of sensor and the distribution uniformity of the nanocolumn array need to be further improved, and the quality of the ZnO crystal is poor. The FWHM of the X-ray rocking curve is generally greater than 200arcsec, and there is a large room for improvement

Method used

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  • A ZnO/Si nano/micro column array sensitive material, a preparing method thereof and a sensor
  • A ZnO/Si nano/micro column array sensitive material, a preparing method thereof and a sensor
  • A ZnO/Si nano/micro column array sensitive material, a preparing method thereof and a sensor

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Effect test

Embodiment 1

[0030] A preparation method of ZnO / Si nano / micro column array sensitive material, comprising the following steps:

[0031] (1) Preparation of Si nano / micro column array 11: Select a commercially available p-type Si single wafer with an X-ray rocking curve half width less than 50 arcsec and a resistance of less than 5Ω as the substrate 10, spin-coat photoresist on its surface, and use metal The plate is used as a mask plate for exposure, development, and ICP etching. The etching depth is 1000nm to obtain a Si nano / micro column array 11 with a diameter of 300nm and a distance of 50nm. figure 1 shown;

[0032] (2) using a PECVD process at 400°C to wrap a layer of 5nm ZnO film 12 on the surface of the Si nano / micro column array 11 prepared in step (1);

[0033] (3) Use a sputtering apparatus to coat a layer of 10nm Pt film on the surface of the ZnO thin film 12, then raise the temperature to 750°C at a heating rate of 50°C / min, and anneal for 40s to form on the surface of the ZnO...

Embodiment 2

[0036] A method for preparing a ZnO / Si nanometer / microcolumn array sensitive material, specifically comprising the following steps:

[0037] (1) Preparation of Si nano / micro column arrays: use a commercially available p-type Si single wafer with an X-ray rocking curve half-maximum width of less than 50arcsec and a resistance of less than 5Ω as a substrate, spin-coat photoresist on its surface, and use a metal plate as a substrate. The mask plate is exposed, developed, and etched by ICP to obtain a Si nano / micro column array, wherein the etching depth is 800nm, the diameter of the Si nano / micro column is 200nm, and the distance between them is 50nm;

[0038] (2) Using magnetron sputtering process at room temperature and vacuum pressure greater than 10 -3 The surface of the Si nano / micro column array prepared in step (1) is coated with a 10nm ZnO thin film under the environment of Pa, and then annealed at 500° C. for 30 min;

[0039] (3) Use a sputtering apparatus to coat a lay...

Embodiment 3

[0042] A method for preparing a ZnO / Si nanometer / microcolumn array sensitive material, specifically comprising the following steps:

[0043] (1) Preparation of Si nano / micro column arrays: select a commercially available p-type Si single wafer with an X-ray rocking curve half-maximum width of less than 50 arcsec and a resistance of less than 5Ω as the substrate, spin-coat photoresist on its surface, and use a metal plate as the substrate. The mask plate is exposed, developed, and etched by ICP to obtain a Si nano / micro column array, wherein the etching depth is 5000nm, the diameter of the Si nano / micro column is 1000nm, and the distance between them is 100nm;

[0044] (2) using the PECVD process at 400°C to wrap a layer of 5nm ZnO film on the surface of the Si nano / micro column array prepared in step (1);

[0045] (3) Use a sputtering apparatus to coat a layer of 10nm Au film on the surface of the above-mentioned ZnO film, then raise the temperature to 750°C at a heating rate ...

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Abstract

A ZnO / Si nano / micro column array sensitive material is disclosed. The material includes a Si substrate, a Si nano / micro column array, a ZnO film, Pt nanoparticles and an electrode material. The Si nano / micro column array is arranged on the Si substrate and is covered with the ZnO film. The ZnO film is loaded with metal nanoparticles. The top of the Si nano / micro column array is also provided withthe electrode material. The metal nanoparticles are at least one of Pt, Au, Ag, Ni and Fe nanoparticles. A preparing method of the sensitive material and a sensor are disclosed. Through controlling orderliness and uniformity of the Si nano / micro column array, dispersion effects of the ZnO and the metal nanoparticles are regulated. Sensitivity and overall performance of the sensor are improved by utilizing special optical characteristics of the Si nano / micro column array and local surface plasma enhancement effects of the metal nanoparticles.

Description

technical field [0001] The invention belongs to the technical field of semiconductor sensing, and in particular relates to a ZnO / Si nano / micro column array sensitive material, a preparation method thereof and a sensor prepared from the sensitive material. Background technique [0002] Sensors have been widely used in smart home, safe production, environmental protection, national defense and other fields, especially Si-based sensors are the most widely used. Si has attracted attention due to its mature preparation process, low cost, and large size. However, the existing silicon-based sensors usually use Si nano-arrays obtained by etching the Si substrate as the sensitive material, and further increase Au electrodes and leads. The Si nano-array has a significant impact on the detection sensitivity, resulting in the minimum detection limit of the sensor containing the Si nano-array at the level of 100ppm, which is far lower than the 5-10ppm level of other semiconductor sensors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 杨为家何鑫沈耿哲江嘉怡刘俊杰刘铭全刘艳怡王诺媛蒋庭辉劳锦棠
Owner WUYI UNIV