Flexible display device and manufacturing method thereof
A flexible display and display device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of device damage and high cost, and achieve the elimination of static electricity, easy peeling, and weakened interlayer force. Effect
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[0043] A method for preparing a flexible display device, comprising the following steps:
[0044] S1. Acquiring a carrier substrate;
[0045] The material of the carrier substrate can be selected from rigid substrates such as quartz and glass. Preferably, the material of the carrier substrate is glass. It can be understood that the baffle is provided at the edge of the carrier substrate, and the baffle is also provided with a fixing part. Specifically, the fixing part is an inverted L-shaped structure, and the fixing part of the baffle can be solidified on the second layer of polymer film. After the film, it is embedded in the second layer of polymer film. Preferably, the material of the baffle is glass, and the baffle is formed on the edge of the carrier substrate through a glass etching process and a glass welding process.
[0046] Further, obtaining the carrier substrate also includes performing surface treatment on the carrier substrate, and cleaning the carrier substrat...
Embodiment 1
[0073] This embodiment provides a method for preparing a flexible display device, such as figure 1 shown, including the following steps:
[0074] S1. Acquiring a carrier substrate;
[0075] The edge of the carrier substrate is provided with an inwardly flanging baffle plate, such as figure 2 As shown, the end of the baffle can be embedded in the second layer of PI film, and the material of the carrier substrate and the baffle is glass.
[0076] Plasma treatment of glass substrates with inert gases such as nitrogen and argon.
[0077] S2, forming a first layer of PI film on the carrier substrate;
[0078] Such as image 3 As shown, the PI solution was coated on the carrier substrate by using the slit coating process. After the solution coating was completed, the wet film was quickly transferred to a clean vacuum oven, and stood for 30 minutes under low vacuum conditions. Under nitrogen atmosphere, The PI wet film is heated by infrared radiation. The power of infrared radi...
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Abstract
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