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An integrated circuit thermal management system based on graphene material

A thermal management system and integrated circuit technology, applied in the manufacture/processing of circuits, thermoelectric devices, thermoelectric device junction lead-out materials, etc., can solve the problem of rapid time response to temperature changes, hot spots that cannot conduct heat quickly, and temperature control that cannot be guaranteed Accuracy and other issues, to achieve the effect of light weight, small size, and easy integration

Active Publication Date: 2018-12-11
XUZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above research is based on the high thermal conductivity of graphene to achieve heat dissipation, which is still passive heat dissipation, uncontrollable, unable to respond quickly to sharp temperature changes, and cannot quickly conduct heat to hot spots, and there will still be periodic heat accumulation problems. Temperature control accuracy cannot be guaranteed

Method used

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  • An integrated circuit thermal management system based on graphene material
  • An integrated circuit thermal management system based on graphene material
  • An integrated circuit thermal management system based on graphene material

Examples

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preparation example Construction

[0029] Preparation of P-type and N-type graphene materials

[0030] Lattice doping is the introduction of doping atoms during the growth of graphene. The doping atoms replace the carbon atoms in the graphene planar hexagonal lattice and form bonds with adjacent carbon atoms. The doping atoms have fewer valence electrons than carbon Atoms form P-type doping, and doped atoms have more valence electrons than carbon atoms to form N-type doping. In this embodiment, the chemical vapor deposition method is used to grow graphene, and then the crystal lattice is doped with boron and nitrogen elements to prepare P-type and N-type graphene respectively. The basic process is briefly described as follows: put the clean copper sheet into the nickel boat and put it into the constant temperature zone of the tube furnace, pass the carrier argon gas, hydrogen gas, and then pass methane to react. After the reaction, stop the flow of methane, stop heating, and continue Pass argon and hydrogen, a...

Embodiment 1

[0033] Such as figure 1 As shown, a graphene-based integrated circuit thermal management system includes a power supply system, a switching device, a temperature control unit, and a current controller.

[0034] The temperature control unit includes a positive electrode, a negative electrode, and a plurality of P-type graphene materials and N-type graphene materials, and the P-type graphene material and the N-type graphene material are alternately arranged between the positive electrode and the negative electrode, so Both positive and negative electrodes are Ag electrodes;

[0035] The positive electrode of the power supply system is connected to one end of the switching device, the other end of the switching device is connected to the positive electrode of the temperature control unit, the negative electrode of the temperature control unit is connected to one end of the current controller, and the other end of the current controller is connected to the negative electrode of th...

Embodiment 2

[0041] Such as Figure 4 As shown, a graphene-based integrated circuit thermal management system includes a power supply system, switching devices 1-4, four temperature control units, and current controllers 1-4.

[0042] The temperature control unit includes a positive electrode, a negative electrode, and a plurality of P-type graphene materials and N-type graphene materials, and the P-type graphene materials and N-type graphene materials are alternately arranged between the positive electrode and the negative electrode. Both the positive electrode and the negative electrode are Ag electrodes; the temperature control units are spatially distributed in one of the following combinations: a single row arranged side by side, multiple rows and multiple columns alternately arranged, and an upper and lower T-shaped asymmetric arrangement;

[0043] The positive electrode of the power supply system is respectively connected to one end of the switching device 1, one end of the switchin...

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Abstract

The invention discloses an integrated circuit thermal management system based on graphene material, which comprises a power supply system, at least one switching device, at least one temperature control unit and at least one current controller. A temperature control unit comprise a positive electrode, a negative electrode, a plurality of P-type graphene materials and an N-type graphene material, wherein that P-type graphene material and the N-type graphene material are arranged alternately between the positive electrode and the negative electrode in turn; the positive electrode of the power supply system is connected to one end of the switching device, the other end of the switching device is connected to the positive electrode of the temperature control unit, the negative electrode of thetemperature control unit is connected to one end of the current controller, and the other end of the current controller is connected to the negative electrode of the power supply system. The invention realizes active controllable heat dissipation based on Peltier effect, realizes spatial modulation distribution of heat field under the action of switching device, and realizes modulation distribution of heat in time domain under the action of current regulator.

Description

technical field [0001] The invention belongs to the field of integrated circuit thermal management, relates to an integrated circuit thermal management system, in particular to an integrated circuit thermal management system based on graphene materials. Background technique [0002] With the increasing integration of chips and the miniaturization of products, the problem of heat accumulation is becoming more and more urgent to be solved. In products of large-scale integrated circuits in an extremely limited space, local hot spots are prone to occur, resulting in uneven temperature distribution and forming a temperature gradient. Thermal stresses generated by temperature gradients are very destructive to structures. If the heat of the hot spot is not released in time, it will rise sharply in a short period of time to form a thermal shock, which will cause irreversible and permanent damage to the circuit. [0003] At present, heat dissipation methods are divided into active ...

Claims

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Application Information

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IPC IPC(8): H01L35/32H01L35/14H01L35/34H01L23/38
CPCH01L23/38H10N10/851H10N10/01H10N10/17
Inventor 周伟陈祥沈德元柳阳雨吴倩倩葛志祥王敬如
Owner XUZHOU NORMAL UNIVERSITY
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