A method for forming a
silicon-on-insulator
transistor (80) includes forming an active region (82) overlying an insulating layer (122), wherein a portion of the active region provides an intrinsic
body region (126). A body tie access region (128) is also formed within the active region, overlying the insulating layer and laterally disposed adjacent the intrinsic
body region, making electrical contact to the intrinsic
body region. A gate
electrode (134) is formed overlying the intrinsic body region for providing
electrical control of the intrinsic body region, the gate
electrode extending over a portion (137) of the body tie access region. The gate
electrode is formed having a substantially constant
gate length (88) along its entire width overlying the intrinsic body region and the body tie access region to minimize
parasitic capacitance and gate electrode leakage. First and second current electrodes (98,100) are formed adjacent opposite sides of the intrinsic body region. In addition, a body tie
diffusion (130) is formed within the active region and laterally offset from the body tie access region and electrically coupled to the body tie access region.