Preparation method of three-dimensional graphene with controllable distribution

Abstract

A preparation method of three-dimensional graphene with controllable distribution belongs to the technical field of graphene preparation and solves the problems that graphene is disorder and uncontrollable in distribution during synthesis of three-dimensional graphene in the prior art. In the invention, a silicon wafer is alternatively subjected to passivation and etching processes in an inductively-coupled plasma multiple system through a circulating deep reactive ion etching process without addition of oxygen, thus forming silicon grass; then the three-dimensional graphene grows on the silicon grass being a substrate in a tubular plasma enhanced chemical vapor deposition device.

Description

technical field

[0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a method for preparing three-dimensional graphene with controllable distribution. Background technique

[0002] 3D graphene has a high specific surface area, high electrical conductivity, and a unique three-dimensional structure that allows charged particles to come into contact quickly in practical applications. Therefore, it is widely used in the field of energy storage, such as transparent electrodes, supercapacitors, lithium-ion batteries, solar cells, etc. At the current stage, copper foil, nickel foil, quartz wafer, silicon wafer and other common metals or non-metals are mainly used to grow three-dimensional graphene through plasma-enhanced chemical vapor deposition equipment. However, the distribution of three-dimensional graphene synthesized by this method is chaotic and uncontrollable, which greatly limits the application of three-dimensional gr...

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