Processing method for target materials to be processed
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 宁波创润新材料有限公司
- Publication Date
- 2018-12-18
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Abstract
Description
technical field
[0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a processing method for a target to be processed. Background technique
[0002] The target is also called a sputtering target, which is a sputtering source that forms various functional films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. To put it simply, the target is the target material bombarded by high-speed energetic particles. It is used in high-energy laser weapons. When lasers with different power densities, different output waveforms, and different wavelengths interact with different targets, they will produce different damages. effect. Different film systems (such as superhard, wear-resistant, anti-corrosion alloy films, etc.) can be obtained by replacing different target materials (such as aluminum, copper, stainless steel, titanium...