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Processing method for target materials to be processed

A processing method and target technology, applied in the field of semiconductor sputtering target manufacturing, can solve the problems of low recovery rate of waste targets and the like

Active Publication Date: 2018-12-18
宁波创润新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the existing technology has a very low recovery rate for waste targets

Method used

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  • Processing method for target materials to be processed
  • Processing method for target materials to be processed
  • Processing method for target materials to be processed

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Experimental program
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Embodiment Construction

[0035] The recycling rate of the target to be treated in the prior art is very low.

[0036] Combined with the treatment methods of waste titanium targets, the reasons for the low recycling rate of targets to be treated are analyzed:

[0037] There are two main ways to treat waste titanium targets: one is to be sold as waste titanium at a low price; the other is to cut some titanium plates or particles from waste titanium targets by machining.

[0038] The first treatment method does not reuse the titanium target, resulting in waste of titanium material. Although the second treatment method allows the waste titanium target to be easily recycled, the surface of the titanium target becomes rough due to the bombardment of high-energy ions after sputtering, and has a strong adsorption effect on impurities. In addition, due to the high surface temperature of the waste titanium target formed after the titanium target is sputtered, it is easy to react with external impurities, resul...

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Abstract

The invention provides a processing method for target materials to be processed. The processing method comprises the steps that the target materials to be processed are provided; the target materialsto be processed are subjected to first acid pickling treatment through a first acid solution to form initial target materials, and the first acid solution and the target materials to be processed aresubjected to a first chemical reaction to remove part of materials on the surfaces of the target materials to be processed; and the initial target materials are subjected to second acid pickling treatment through a second acid solution, and the second acid solution and the initial target materials are subjected to a second chemical reaction to remove part of materials on the surfaces of the initial target materials, specifically, the rate of the second chemical reaction is smaller than the rate of the first chemical reaction. By means of the processing method, the recovery rate of the target materials to be processed can be increased.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a processing method for a target to be processed. Background technique [0002] The target is also called a sputtering target, which is a sputtering source that forms various functional films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. To put it simply, the target is the target material bombarded by high-speed energetic particles. It is used in high-energy laser weapons. When lasers with different power densities, different output waveforms, and different wavelengths interact with different targets, they will produce different damages. effect. Different film systems (such as superhard, wear-resistant, anti-corrosion alloy films, etc.) can be obtained by replacing different target materials (such as aluminum, copper, stainless steel, titanium...

Claims

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Application Information

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IPC IPC(8): C22B7/00C22B34/12C23G1/10
CPCC22B7/003C22B34/1295C23G1/106Y02P10/20
Inventor 吴景晖姚力军钟翔
Owner 宁波创润新材料有限公司
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