A preparation method of GaN-based horizontal nano cylindrical shell-core structure array LED

Abstract

The invention discloses a preparation method of a GaN-based horizontal nano cylindrical shell-core structure array LED. The prepared LED structural unit comprises the following steps: an undoped and doped GaN thin film substrate is epitaxially grown on a sapphire; a GaN thin film substrate is epitaxially doped with a GaN thin film; SiO2 Mask Layer of Grating Array Pattern Prepared by Nano-imprintPrinting; GaN-based multiple quantum well shell-core horizontal nano-column array grown by MOCVD with InGaN / GaN active layer and p-type GaN shell; Transparent dielectric filling layer between nano-column arrays; Etched mesas and electrodes. The invention has the following advantages: using nano-imprinting can overcome the diffraction limit of the traditional photolithography technology to preparea window area below 100 nanometers; The size and position of nano-column array can be controlled precisely by grating array pattern mask and MOCVD secondary epitaxy. The number of nano-columns in thenano-column array LED can be flexibly changed according to the power demand. The structure prepared by the invention has potential application value in visible light communication, high-resolution intelligent display and photoelectric interconnection.

Description

technical field [0001] The invention belongs to the field of nanometer material science and technology and low-dimensional photoelectric devices, and provides a method for preparing a gallium nitride-based horizontal nanocolumn core-shell structure array LED. Background technique [0002] In recent years, low-dimensional quantum structures such as semiconductor nanopillars, nanowires, and quantum dots have attracted the attention of academic and industrial circles at home and abroad. Nanostructures have the characteristics of high geometric constraints, large surface-to-volume ratio, and zero dislocation, and have important application prospects in micro-nano optoelectronic devices and micro-nano optoelectronic integration. Gallium nitride-based semiconductor materials are direct bandgap semiconductors. The wide energy band of this material system covers from infrared to ultraviolet bands. Therefore, gallium nitride-based nano-light-emitting devices are ideal for optical com...

AI Technical Summary

Problems solved by technology

E-beam exposure process is complicated and expensive

The cost of self-assembled nanopillar arrays is low, but the size and distribution of nanopillars obtained by this method are random, and the inhomogeneity limits the application of this method

Vertical nanocolumn array, for example, the publication number is CN107424912A, the publication date is December 1, 2017, and the Chinese invention patent document titled "a preparation method of gallium nitride-based nanocolumn array", this technical solution In this process, it is necessary to solve the control of the aspect ratio in the secondary epitaxy to form a uniform nanopillar array, but its main light-emitting part is on the non-polar side wall, that is, the m-plane, and the uniformity of quantum well deposition on this crystal plane has not yet been solved. , and electrode preparation and carrier transport in nanopillars are additional difficulties

Images