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Etching method for patterned sapphire substrate

A technology for patterning sapphire and sapphire substrates, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as poor pattern consistency, rough etching surface, etc., achieve strong anti-static ability, high luminous power, improve The effect of precision

Inactive Publication Date: 2018-12-18
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a patterned sapphire substrate etching method to solve the shortcomings of rough etching surface and poor pattern consistency in the prior art

Method used

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  • Etching method for patterned sapphire substrate
  • Etching method for patterned sapphire substrate
  • Etching method for patterned sapphire substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a method for etching a patterned sapphire substrate, which is used for more precise etching of the sapphire substrate, and has the advantages of good pattern consistency and high etching precision. Such as figure 1 Shown is the flowchart of the etching method of patterned sapphire substrate, and this method comprises the following steps:

[0043] S101: providing a sapphire substrate;

[0044] S102: Coating the positive photoresist on the surface of the sapphire substrate, sending the sapphire substrate coated with the positive photoresist to the hot plate for the first baking, the baking temperature is 90-110°C, The baking time is 60~120s;

[0045] Photoresist is divided into positive photoresist and negative photoresist. The positive photoresist is the one that becomes soluble after being illuminated. Using this property, the photoresist can be used as a coating to Etch the required circuit pattern on the surface of the sapphire substrate. ...

Embodiment 2

[0060] On the basis of Example 1, this embodiment provides a preferred method for etching a sapphire substrate, such as figure 2 Shown is a flow chart of another etching method for a sapphire substrate. The method includes the following steps:

[0061] S201: providing a sapphire substrate;

[0062] S202: After ultrasonically cleaning the sapphire substrate with acetone or isopropanol, rinse with deionized water, heat and clean with a mixture of sulfuric acid and hydrogen peroxide, and rinse with deionized water. Wherein, the mass fractions of sulfuric acid and hydrogen peroxide are 98% and 30% respectively, and the volume ratio of sulfuric acid and hydrogen peroxide is 3:1˜4:1.

[0063] S203: Coating the positive photoresist on the surface of the sapphire substrate, sending the sapphire substrate coated with the positive photoresist to the hot plate for the first baking, the baking temperature is 90-110°C, The baking time is 60~120s;

[0064] Photoresist is divided into p...

Embodiment 3

[0078] In this example, a total of 2000 samples of sample P1 were produced according to the methods provided in Examples 1 and 2, and a total of 2000 samples of P2 were formed for comparison. Wherein, the comparison method of making sample P2 is described as follows:

[0079] S301: providing a sapphire substrate;

[0080] S302: Coat the positive photoresist on the surface of the sapphire substrate, send the sapphire substrate coated with the positive photoresist to the hot plate for the first baking, the baking temperature is 105°C, and bake The time is 60s;

[0081] S303: Send the sapphire substrate after the first baking to a cold plate at 23°C for the first cooling, the cooling time is 30s, and form a photolithography mask with a film thickness of 2.3um on the surface of the sapphire substrate;

[0082] S304: For the sapphire substrate after cooling for the first time, control the exposure focal length between -0.3~0.3um, the exposure time is 200ms, and the pattern diamet...

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Abstract

The invention discloses an etching method of a patterned sapphire substrate, which comprises the following steps: coating photoresist on the surface of the sapphire substrate; baking the sapphire substrate; cooling the baked sapphire substrate to form a photoetching mask on the sapphire substrate; Carrying out exposure treatment on the photoetching mask; The exposed sapphire substrate is baked fora second time, and the sapphire substrate is cooled for a second time after the second baking; developing a sapphire substrate; Baking the developed sapphire substrate for the third time, cooling thebaked sapphire substrate for the third time, developing the cooled sapphire substrate for the third time, and detecting the baked sapphire substrate for the third time; The first dry etching is carried out on the sapphire substrate detected after development; The sapphire substrate after the first dry etching is subjected to thermal annealing treatment; The sapphire substrate after thermal annealing was etched twice by dry etching. The method provided by the invention can improve the consistency of the etching pattern.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, to an etching method for a patterned sapphire substrate. Background technique [0002] Sapphire is an extremely important basic material in the optoelectronic industry, and is widely used in many fields such as microelectronics, optoelectronics, optical communications and lasers. Sapphire crystal is the most important industrialized substrate for semiconductor LED lighting. [0003] In the existing GaN-LED structure, the light emitted from the active layer is lost through total reflection and absorption inside the LED, and finally less than 5% of the light escapes from the LED surface. Improving the light extraction efficiency of the LED has become the goal of many scholars. research topic. PSS (Patterned Sapphire Substrate) is a mask for dry etching grown on a sapphire substrate. The mask is etched with a pattern using a standard photolithography process, and the ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/02
CPCH01L21/02019H01L33/007
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS