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Regenerated wafer chemical mechanical polishing solution and preparation method thereof

A chemical machinery and polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve the problems of wafer surface damage, slow corrosion rate, increased cost, etc., to repair surface damage, increase fluidity, and stabilize friction. Effect

Active Publication Date: 2021-12-31
万华化学集团电子材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there will be the following problems: (1) fast and uneven corrosion, causing damage to the wafer surface; (2) since the corrosion rate of the central part is slower than that of the peripheral part, the central part of the wafer is more dense than the peripheral side. thick; (3) there may be residual film after chemical corrosion
However, controlling the number of large particles in the polishing liquid requires fine filtration steps, and the consumption of different specifications of filter elements will increase the cost, which is inconsistent with the original intention of using recycled wafers

Method used

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  • Regenerated wafer chemical mechanical polishing solution and preparation method thereof
  • Regenerated wafer chemical mechanical polishing solution and preparation method thereof
  • Regenerated wafer chemical mechanical polishing solution and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1～11

[0042] Prepare the regenerated wafer chemical mechanical polishing liquid, the composition of the raw material components and mass percentages except water in the formula is shown in Table 1, the balance is ultrapure water, and the sum of the mass percentages of each component is 100% , the steps are:

[0043] 1) Take the grinding particles, add water to dilute under the stirring condition, and mix evenly to obtain a dispersion;

[0044] 2) After uniformly mixing the rate accelerator, complexing agent, and pH regulator, add it to the dispersion liquid in step 1), fully dissolve and mix uniformly to obtain a mixed liquid;

[0045] 3) Add the nonionic surfactant and the betaine-type zwitterionic surfactant into the mixed liquid in step 2) under stirring condition, and mix evenly to prepare the regenerated wafer chemical mechanical polishing liquid.

[0046] The raw material composition of the regenerated wafer chemical mechanical polishing liquid of Table 1 Embodiment 1~11

[...

Embodiment 1～11 and comparative example 1～5

[0059] Embodiment 1~11 and comparative example 1~5 prepare the application of polishing liquid:

[0060] The diameter of the silicon wafer used is 300mm, provided by Shandong Yuanjing Electronic Technology Co., Ltd., through chemical etching, there are scratches on its surface (the silicon wafer used in embodiment 10 is as follows: figure 1 Shown, the silicon wafer surface that other embodiment and comparative example adopt all have similar scratches).

[0061] Dilute each polishing solution 20 times with ultrapure water before use, the pH after dilution is 10-11, and the solid content is 0.5%-1%.

[0062] The polishing conditions are as follows: the polishing machine is a Japanese Speedfam 36GPAW single-side polishing machine with four polishing heads, and each polishing head can polish a regenerated wafer.

[0063] The polishing pad is SUBA800. Polishing pressure 300g / cm 2 , the temperature of the polishing pad is 27°C, the rotational speed of the polishing head and the p...

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Abstract

The invention provides a regenerated wafer chemical mechanical polishing solution and a preparation method thereof. The regenerated wafer chemical mechanical polishing solution comprises the following components in percentage by mass: 5%-50% of grinding particles, 0.1%-10% of a rate accelerator, 0.5%-5% of a complexing agent, 0.1%-2% of a pH regulator, 0.001%-1% of a nonionic surfactant, 0.001%-1% of a betaine zwitterionic surfactant and the balance of water. The polishing solution can effectively repair the surface damage of the regenerated wafer, remove the residual film on the surface and maintain the high removal rate of the silicon wafer. The surface quality of the polished regenerated wafer is excellent, and the cycle use frequency is increased.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing (CMP), in particular to a regenerated wafer chemical mechanical polishing liquid and a preparation method thereof. Background technique [0002] Semiconductor technology has developed rapidly in the past few decades. Silicon wafers are getting bigger and bigger from 50mm to 300mm. The key dimensions of electronic devices are constantly shrinking. Due to the gradual shrinking of device sizes and the reduction of focal depth of optical lithography equipment , The requirements of the integrated circuit manufacturing process on the surface of the silicon wafer have also increased to the nanometer level. The flatness of the silicon wafer surface will be directly related to the performance quality of the chip, so the fab needs to monitor and maintain the stability of the performance of the manufacturing equipment at all times to ensure the final yield. Since many tests and stabili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 徐贺卫旻嵩卞鹏程王庆伟李国庆王永东崔晓坤王瑞芹
Owner 万华化学集团电子材料有限公司