Perpendicular magnetization MTJ device and STT-MRAM

A vertical magnetization and device technology, which can be used in electric solid devices, semiconductor devices, magnetic field-controlled resistors, etc., and can solve the problem of high critical write current.

Active Publication Date: 2018-12-25
CETHIK GRP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main purpose of this application is to provide a vertical magnetization MTJ device and STT-MRAM to solve the problem of high critical writing current of the vertical magnetization MTJ device in the prior art

Method used

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  • Perpendicular magnetization MTJ device and STT-MRAM
  • Perpendicular magnetization MTJ device and STT-MRAM
  • Perpendicular magnetization MTJ device and STT-MRAM

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The STT-MRAM memory includes a plurality of MTJ devices, and also includes a switch circuit electrically connected to the MTJ devices, and the switch circuit includes a switch, a word line, a bit line and a source line. The specific connection relationship is the same as that in the prior art, and will not be repeated here.

[0062] The structure of the MTJ unit is as figure 2 As shown, the first electrode layer 1 is a Ta layer with a thickness of The reference layer 2 includes a plurality of structural layers, along the direction away from the first electrode layer. Wherein the reference structure layer is CoFeB, and its magnetization direction is perpendicular to the film plane (i.e. the thickness direction of each layer); the insulating barrier layer 3 is a MgO layer, and its thickness is Its forbidden band width η 1 =7.6eV; the free layer 4 is Thick CoFeB layer; enhancement layer 5 is Pd layer, its thickness is The decoupling layer 6 is a Cu layer, and it...

Embodiment 2

[0064] The difference from Example 1 is that the thickness of the reinforcement layer is The thickness of the decoupling layer is

Embodiment 3

[0066] The difference from Example 1 is that the thickness of the reinforcement layer is The thickness of the decoupling layer is

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Abstract

The invention provides a perpendicular magnetization MTJ device and an STT-MRAM. The perpendicular magnetization MTJ device includes a reference layer, an insulating barrier layer, a free layer, an enhancement layer, a demagnetization coupling layer and a fixed layer which are superposed in order, wherein magnetization directions of the reference layer and the fixed layer are opposite, the enhancement layer is used for enhancing the perpendicular magnetic anisotropy of the free layer, and the demagnetization coupling layer is used for isolating the free layer from the fixed layer. The perpendicular magnetization MTJ device reduces a critical write current and the energy consumption of a chip of the STT-MRAM, and improves the write rate of data. Furthermore, the fixed layer can counteract stray magnetic field acting on the free layer by the reference layer so as to avoid mutual interference between different bits. In addition, the enhancement layer in the perpendicular magnetization MTJdevice can enhance the magnetic anisotropy of the free layer, thereby improving the stability of the free layer.

Description

technical field [0001] The present application relates to the technical field of computer storage, in particular to a vertical magnetization MTJ device and STT-MRAM. Background technique [0002] Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM for short) is a new type of non-volatile memory whose core storage unit is an MTJ device. MTJ is mainly composed of reference layer, insulating barrier layer and free layer. The reference layer is also called the pinned layer, its magnetization direction remains unchanged, only the magnetization direction of the free layer is changed to make it the same direction or opposite to the reference layer. [0003] MTJ devices rely on quantum tunneling to allow electrons to pass through insulating barrier layers. The tunneling probability of polarized electrons is related to the relative magnetization directions of the reference layer and the free layer. When the magnetization direction of the free layer is the same as that of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/08H01L27/22
CPCH10B61/00H10N50/10H10N50/01G11C11/16H10N59/00
Inventor 简红蒋信
Owner CETHIK GRP
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