Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A positive photoresist stripping cleaning composition and application thereof

A technology for cleaning composition and positive photoresist, applied in optics, optomechanical equipment, photosensitive material processing and other directions, can solve the problem of photoresist residue on the surface of the substrate, and achieve the effect of improving the degree of corrosion

Active Publication Date: 2019-01-08
JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no obvious corrosion on the surface of the substrate after being treated with the above degumming and cleaning composition, but photoresist remains on the surface of the stripped substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A positive photoresist stripping cleaning composition and application thereof
  • A positive photoresist stripping cleaning composition and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0032] The composition of embodiment 1-4 and the percentage by weight of each component see the following table:

[0033]

[0034] In the above table, the quaternary ammonium hydroxide in Examples 1-4 is tetramethylammonium hydroxide, the water-soluble alkanolamine is N-methylethanolamine, and the water-soluble organic polar solvent is N-methylpyrrolidone , The ester compound with cyclohexyl is ethyl cyclohexanecarboxylate.

[0035] The weight percent of each component in embodiment 5-9 is based on embodiment 2, and difference is that quaternary ammonium hydroxide is tetraethylammonium hydroxide, and water-soluble alkanolamine is diethanolamine, and water-soluble organic polar solvent is DMSO (dimethylsulfoxide).

Embodiment 6

[0036] The component selection of Examples 6-9 is based on Example 5, the difference is that the ester compound with cyclohexyl in Example 6 is cyclohexyl formate, and the ester compound with cyclohexyl in Example 7 is 4-tert-butylcyclohexyl Acetate, the ester compound with cyclohexyl in embodiment 8 is cyclohexyl mercaptopropionate, the ester compound with cyclohexyl in embodiment 9 is cyclohexyl mercaptopropionate and cyclohexyl propionate in weight ratio 1:1 combined.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A positive photoresist stripping cleaning composition is disclosed and is composed of quaternary ammonium hydroxide, water-soluble alkanolamine, water-soluble organic polar solvent and ester compoundwith cyclohexyl group. A positive photoresist stripping cleaning composition contains an ester compound having a cyclohexyl group, the esters are stable in alkaline organic phase, The quaternary ammonium hydroxide ionizes in the aqueous washing solution to form hydroxide ion, the aqueous washing solution is alkaline, and the ester compound with cyclohexyl group hydrolyzes in alkaline condition toform acid and alcohol and keep the reaction balance, the acid can neutralize hydroxide ion in the alkaline solution quickly, and improve the corrosion degree of the metal layer on the wafer surface inthe washing process. The invention also discloses the application of a positive photoresist stripping cleaning composition in a substrate photoresist stripping process.

Description

technical field [0001] The invention relates to the technical field of photoresist stripping and cleaning compositions, in particular to a positive photoresist stripping and cleaning composition and its application. Background technique [0002] In the TFT-LCD process, a film is formed on the array substrate by Sputter or CVD, and the photoresist is used as a mask to obtain the desired pattern on the film layer by wet etching or dry etching. The process of removing the photoresist used as a mask is called lift-off. Photoresist can be divided into positive photoresist and negative photoresist according to the mechanism of action. The exposed area of ​​the positive photoresist is easier to dissolve in the developer, and the positive photoresist resin is novolac resin. [0003] Regarding the removal of positive photoresist (such as AZ4620 series) on 8-inch and 12-inch wafers in the semiconductor wafer-level packaging and testing industry, the following non-aqueous degumming cl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/426
Inventor 李森虎承明忠朱龙邵勇顾玲燕陈林殷福华赵文虎姚玮
Owner JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products