A UWB Low Noise Amplifier with Active Inductor

A low-noise amplifier and ultra-broadband technology, applied in low-noise amplifiers, amplifiers with semiconductor devices/discharge tubes, amplifiers, etc., can solve the problems of low yield rate and low-noise amplifier chip area can not be too large, etc., to achieve low Effects of DC power consumption, large gain, and broadened operating bandwidth

Active Publication Date: 2020-08-28
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

The requirements for its compatibility make a low-noise amplifier circuit must be able to work in a wider frequency band; the requirements for its ability to work for a long time make low power consumption another pursuit of low-noise amplifier design; its cost Considering that the chip area of ​​the low-noise amplifier should not be too large, so that the yield rate will drop

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  • A UWB Low Noise Amplifier with Active Inductor
  • A UWB Low Noise Amplifier with Active Inductor
  • A UWB Low Noise Amplifier with Active Inductor

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Embodiment Construction

[0019] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] The invention provides an ultra-wideband low-noise amplifier with active inductance, which is composed of an input module 1, an amplification module 2 and a feedback branch 3. Input module 1 consists of NMOS transistors NM 1 , DC blocking capacitor C 1 , capacitance C 2 and inductance L 1 The LC network formed, the source feedback resistor R 1 , bias resistor R 3 and the load resistor R 2 constituted to provide broadband input matching...

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Abstract

The invention discloses an ultra-wideband low-noise amplifier with an active inductor, which realizes ultra-wideband and ultra-low noise. The ultra-wideband microwave low noise amplifier with active multiplexing feedback comprises an input module (1), an amplification module (2) and a feedback branch (3). In the invention, an active inductor is introduced into an input terminal to realize input matching, and the active inductor used is composed of a source-level follower composed of an NMOS transistor, a load and a source-level feedback resistor. NMOM and PMOS are stacked in the amplifier module to form current multiplexing, and the signal is AC coupled to the gate of NMOS and PMOS to provide the gain of low noise amplifier and reduce the DC power consumption of low noise amplifier. In addition, a resistive negative feedback branch is introduced between the output and the active inductor to further widen the bandwidth of the LNA. The invention has the advantages of simple structure, easy integration and small chip area.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuits, in particular to an ultra-wideband low-noise amplifier with active inductance, which has the characteristics of wideband, low noise and low power consumption. Background technique [0002] The low noise amplifier circuit has a very wide range of applications. As the first stage circuit of a wireless communication receiver, it plays a vital role in the overall performance of the receiver link. [0003] With the approaching of the 5G era, different communication standards are constantly emerging, and the industry is constantly advancing towards high performance, low cost, low power consumption, and functional integration. As the core module, the low noise amplifier has also received more and more research and attention, and the industry's requirements for the design specifications of the low noise amplifier have also been continuously improved. The requirements for its ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/56H03F1/42H03F3/193
CPCH03F1/42H03F1/565H03F3/193H03F2200/294H03F2200/451
Inventor 闫旭张昊时家惠林福江
Owner UNIV OF SCI & TECH OF CHINA
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