An Infrared Broad Spectrum Light Absorber Based on Semiconductor Materials
A semiconductor and wide-spectrum technology, applied in the field of infrared wide-spectrum light absorbers, can solve the problems of difficult precise, continuous and controllable porosity, and achieve the effects of superior absorption performance, expanded range, and wide applicability
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Embodiment 1
[0046] The silicon substrate is ultrasonically cleaned with acetone and ethanol in sequence, and the silicon substrate is treated with oxygen plasma to improve the hydrophilicity of the silicon substrate. The oxygen plasma treatment power is 50W-500W, and the treatment time is 10 minutes. A single-layer PS ball array was prepared on a silicon substrate, and the single-layer PS ball array was used as a ball array template, and Al was deposited on the ball array template by atomic layer deposition 2 o 3 film. After annealing to remove the ball array template, a single layer of Al with a thickness of 5nm to 1000nm and a spherical shell diameter of 50nm to 100000nm can be obtained on the silicon substrate 2 o 3 Array of hollow spherical shells.
[0047] Dilute and dissolve the silicon particles with isopropanol to obtain a silicon particle dilution, and then ultrasonically disperse. Under the condition of rotating speed of 800rpm~5000rpm, in single layer Al 2 o 3 The silicon...
Embodiment 2
[0049] The silicon substrate is ultrasonically cleaned with acetone and ethanol in sequence, and the silicon substrate is treated with oxygen plasma to improve the hydrophilicity of the silicon substrate. The oxygen plasma treatment power is 50W-500W, and the treatment time is 10 minutes. Repeat the following steps (1) to (3) three times:
[0050] (1) A single layer of Al with a thickness of 5nm to 1000nm and a spherical shell diameter of 50nm to 100000nm is made by the transfer method 2 o 3 The array of hollow spherical shells was transferred to a silicon substrate. Specifically, single-layer Al 2 o 3 The hollow spherical shell array is peeled off from the substrate, and then glued to the silicon substrate; the silicon substrate is heated at a temperature of 80 ° C to 200 ° C for 3 min to 20 min, so that the heat release tape loses its viscosity, so that the Al 2 o 3 The array of hollow spherical shells is left on the silicon substrate;
[0051] (2) Dilute and dissolve ...
Embodiment 3
[0055] The silicon substrate is ultrasonically cleaned with acetone and ethanol in sequence, and the silicon substrate is treated with oxygen plasma to improve the hydrophilicity of the silicon substrate. The oxygen plasma treatment power is 50W-500W, and the treatment time is 10 minutes. A single-layer PS ball array was prepared on a silicon substrate, and the single-layer PS ball array was used as a ball array template, and Al was deposited on the ball array template by atomic layer deposition 2 o 3 film. After annealing to remove the ball array template, a single layer of Al with a thickness of 5nm to 1000nm and a spherical shell diameter of 50nm to 100000nm can be obtained on the silicon substrate 2 o 3 Array of hollow spherical shells.
[0056] will be attached with Al 2 o 3 The silicon substrate of the hollow spherical shell array is placed in the magnetron sputtering chamber, with high-purity metal In as the target material, nitrogen as the nitrogen source, and arg...
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