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A kind of method for preparing silicon carbide powder

A silicon carbide powder, silicon carbide technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of low impurity content, low purity of silicon carbide, and high impurity content

Active Publication Date: 2020-12-25
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing silicon carbide powder in order to overcome the defects of relatively low purity and high impurity content in silicon carbide powder in the prior art, and the silicon carbide content in the silicon carbide powder obtained by the method is At least as high as 99.9%, and the content of each impurity in the product is low, and the total impurity content is below 10ppm

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  • A kind of method for preparing silicon carbide powder

Examples

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Embodiment 1

[0035]This embodiment is used to illustrate the method of preparing silicon carbide powder.

[0036]Using a crucible with an inner diameter of 100mm and a height of 150mm, the polysilicon block (purity of 99.9999%) with a width of more than 100mm is cut into 7 silicon wafers with a diameter of 95mm and a thickness of 5mm with a laser cutting device in an argon atmosphere, and remove them for protection Atmosphere environment, a drill made of silicon carbide drills holes on the silicon wafer uniformly at an interval of 10mm, the diameter of the hole is 3mm; successively weigh the weight of the first silicon wafer and convert it into moles, and then weigh the equal moles High-purity carbon powder (purity of 99.999%), first put the high-purity carbon powder into the bottom of the crucible, shake and mix, and then flatten it with a silicon carbide block to form the first carbon powder layer, and then put the first block The silicon wafer is placed on the carbon powder layer; then the weigh...

Embodiment 2

[0038]This embodiment is used to illustrate the method of preparing silicon carbide powder.

[0039]Using a crucible with an inner diameter of 100mm and a height of 150mm, use a laser cutting device to cut a polysilicon block (purity of 99.999%) with a width of more than 100mm in an argon atmosphere into 25 silicon wafers with a diameter of 85mm and a thickness of 1mm, and remove them for protection Atmosphere environment, a drill bit made of silicon carbide drills holes evenly on the silicon wafer at an interval of 8mm, the diameter of the hole is 2mm; successively weigh the weight of the first silicon wafer and convert it into moles, and then weigh the first piece High-purity carbon powder (purity of 99.999%) of 99% of the silicon wafer moles, first put the high-purity carbon powder into the bottom of the crucible, shake and mix well, and then flatten it with a silicon carbide block to form the first carbon powder Layer, then place the first silicon wafer on the carbon powder layer; ...

Embodiment 3

[0041]This embodiment is used to illustrate the method of preparing silicon carbide powder.

[0042]Using a crucible with an inner diameter of 100mm and a height of 150mm, use a laser cutting equipment to cut a polysilicon block (purity of 99.9999%) greater than 100mm in width into 5 silicon wafers with a diameter of 80mm and a thickness of 3mm under an argon atmosphere with a laser cutting device, and remove them for protection Atmosphere environment, a drill made of silicon carbide drills holes evenly on the silicon wafer at an interval of 5mm, the diameter of the hole is 1mm; successively weigh the weight of the first silicon wafer and convert it into moles, and then weigh the first piece 97% of the high-purity carbon powder (purity of 99.999%) of the silicon wafer moles, first put the high-purity carbon powder into the bottom of the crucible, shake and mix well, then flatten it with a silicon carbide block to form the first carbon powder Layer, and then place the first silicon wafe...

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Abstract

The invention relates to the silicon carbide preparation field, in particular to a preparation method of silicon carbide powder. The method includes: stacking silicon chips and carbon powder layers alternately in turn along the vertical direction, keeping carbon powder layers at the uppermost layer and lowest layer, and then carrying out silicon carbide synthesis reaction. Specifically, the upperand lower surfaces of each layer of silicon chip are covered with carbon powder, the number of layers of the silicon chips is N, the number of layers of the carbon powder layers is N+1, and N is an integer greater than or equal to 3. The silicon carbide powder prepared by the method provide by the invention has high silicon carbide content and low impurity content.

Description

Technical field[0001]The invention relates to the field of silicon carbide preparation, in particular to a method for preparing silicon carbide powder.Background technique[0002]At present, the main synthesis method of high-purity silicon carbide powder is to mix high-purity silicon powder and high-purity carbon powder, then vacuum, and then synthesize at high temperature under inert atmosphere. For example, patent application CN101302011A discloses an artificial synthesis method of high-purity silicon carbide powder for semiconductor single crystal growth. The method includes: (1) Take Si powder and C powder at a ratio of 1:1 by mole; (2) Mix the Si powder and C powder evenly and put them in a crucible, and place the crucible in an intermediate frequency induction heating furnace , Vacuum the growth chamber and raise the temperature to 1000°C; fill the growth chamber with high-purity argon, helium or a mixture of argon and hydrogen, and heat it to a synthesis temperature of 1500°C, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/984
CPCC01P2006/80
Inventor 周芳享周维张颖吴建华余炯智
Owner BYD CO LTD