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An insulated gate bipolar transistor and a manufacturing method thereof

A bipolar transistor and insulated gate technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problem that the breakdown voltage of the device cannot be guaranteed at the same time. performance and reliability issues

Active Publication Date: 2019-01-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems existing in the prior art, an embodiment of the present invention provides an insulated gate bipolar transistor and a manufacturing method thereof, which are used to solve the problem that the insulated gate bipolar transistor in the prior art cannot guarantee the breakdown voltage of the device and the forward conduction of the device at the same time. The technical issues of voltage drop, feedback capacitance, and gate dielectric layer’s withstand voltage and reliability

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  • An insulated gate bipolar transistor and a manufacturing method thereof
  • An insulated gate bipolar transistor and a manufacturing method thereof

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Embodiment 1

[0042] This embodiment provides an insulated gate bipolar transistor, such as figure 1 As shown, the insulated gate bipolar transistor includes: a substrate 101; a buffer layer 102, an epitaxial layer 103, a JFET region 104, a CJI doped region 105, and a first gate dielectric layer 106; wherein,

[0043] The substrate 101 is a SiC substrate of the first heavily doped type, and the first heavily doped type may be N-type or P-type, and the substrate 101 in this embodiment may be an N-type SiC substrate or a P-type SiC substrate with a doping concentration of 10 18 ~10 19 cm -3 .

[0044] The buffer layer 102 is a SiC buffer layer of the second doping type, epitaxially formed on the substrate 101; the second doping type can be P-type or N-type, and the buffer layer 102 in this embodiment is a P-type SiC buffer layer. The doping level and thickness of the buffer layer 102 can be specifically set according to the breakdown voltage, forward conduction voltage drop and dynamic ch...

Embodiment 2

[0062] Corresponding to Embodiment 1, this embodiment provides a method for manufacturing an insulated gate bipolar transistor, such as figure 2 As shown, the methods include:

[0063] S110, epitaxially growing a buffer layer on the substrate;

[0064] In this embodiment, the substrate is a SiC substrate of the first heavily doped type, and the first heavily doped type can be N-type or P-type, and the substrate in this embodiment can be an N-type SiC substrate, or can be P-type SiC substrate with a doping concentration of 10 18 ~10 19 cm -3 .

[0065] The buffer layer is a SiC buffer layer of the second doping type, epitaxially formed on the substrate; the second doping type can be P-type or N-type, and the buffer layer in this embodiment is a P-type SiC buffer layer. The doping level and thickness of the buffer layer can be specifically set according to the breakdown voltage, forward conduction voltage drop and dynamic characteristics of the transistor device. Dynamic ...

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Abstract

The invention provides an insulated gate bipolar transistor and a manufacturing method thereof. The insulated gate bipolar transistor comprises a substrate; a buffer layer formed on the substrate; anepitaxial layer formed on the buffer layer; a junction type field effect structure JFET region formed in that epitaxial layer, and the width of the JFET region is 2.5 to 12 [mu]m; a CJI doped region formed in the JFET region, and the doped region is located at a thickness inflection point of the gate dielectric layer; A first gate dielectric layer formed on the epitaxial layer, the thickness of the first gate dielectric layer being 0.5 [mu]m to 1.2 [mu]m.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] The third-generation semiconductor material silicon carbide (SiC) has the advantages of large band gap, high critical breakdown field strength, high thermal conductivity and high electron saturation rate, and is very suitable for making high-voltage, high-temperature, high-frequency, high-power semiconductor devices. [0003] In the design and manufacture of silicon carbide insulated gate bipolar transistors, there are many challenges. The withstand voltage and reliability of the gate dielectric layer, the breakdown voltage of the device, the forward conduction voltage drop, and the dynamic characteristics all need to be paid attention to. However, In the prior art, it is impossible to reduce the forward conduction voltage drop and feedback capacitance of the devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0623H01L29/66325H01L29/7393
Inventor 田晓丽谭犇宋瓘白云杨成樾刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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