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Photoresist stripper and photoresist stripping method

A technology of photoresist and stripper, which is applied in the field of photoresist stripper and photoresist stripping, and can solve the problems of process stability and work reproducibility reduction of stripper

Inactive Publication Date: 2019-01-22
SUZHOU HENGKANG NEW MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the photoresist is stripped in a high-temperature process, if a large amount of volatilization occurs, the composition ratio will change rapidly, thereby reducing the process stability and work reproducibility of the stripper

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] This embodiment is a photoresist stripping agent, including the following components in mass percentage, amine compound 19%, polar solvent 66%, anticorrosion agent 0.9%, water 14.1%.

[0023] The amine compound includes at least one selected from chain amine compounds and cyclic amine compounds.

[0024] Chain amine compounds include (2-aminoethoxy)-1-ethanol (AEE), aminoethylethanolamine (AEEA), monoethanolamine, N-methylethylamine (N-MEA), 1-aminoisopropyl One or more of alcohol (AIP), methyldimethylamine (MDEA), diethylenetriamine (DETA) and triethylenetetramine (TETA).

[0025] The cyclic amine compound includes one or more of imidazolyl-4-ethanol (IME), aminoethylpiperazine (AEP) and hydroxyethylpiperazine (HEP).

[0026] Polar solvents include aprotic polar solvents and protic polar solvents.

[0027] Aprotic polar solvents are dimethylsulfoxide, N-methylformamide, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N, One or more of N-diethyl...

Embodiment 2

[0035] The difference with respect to embodiment 1 is:

[0036] This embodiment is a photoresist stripper, which includes the following components in mass percentage, 10% of amine compound, 75% of polar solvent, 0.5% of anticorrosion agent, and 14.5% of water.

[0037] Anticorrosion agents include catechol, pyrogallol, gallic acid, phthalic acid, and phthalic anhydride, and the ratio of each component is 1:0.5:0.3:0.5:1.

Embodiment 3

[0039] The difference with respect to embodiment 1 is:

[0040] This embodiment is a photoresist stripping agent, including the following components in mass percentage, 25% of amine compound, 55% of polar solvent, 1.2% of anticorrosion agent, and 18.8% of water.

[0041] Anticorrosion agents include catechol, pyrogallol, gallic acid, phthalic acid, and phthalic anhydride, and the ratio of each component is 2:0.2:0.7:0.4:2.

[0042] When the above-mentioned embodiment is applied, the photoresist can be stripped at low temperature in a short time, and has excellent stripping ability, and there is no photoresist residual substance on the substrate after washing; the photoresist stripper Has low corrosion, prevents the metal film or insulating film under the photoresist from being damaged, does not interact with the solvents that make up the stripper, storage stability of the stripper, and the mixed solvent of the photoresist It is inert and high-temperature stable; considering t...

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PUM

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Abstract

The invention discloses a photoresist stripper comprising the following components in mass percent, amine compound 10-25%, 55-75% polar solvent, 0.5-1.2% corrosion inhibitor and 10-20% water 10-20%.The photoresist stripper with a suitable composition of the present invention facilitates its application in integrated circuits, semiconductor devices or liquid crystal displays.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits or semiconductor applications, in particular to a photoresist stripping agent and a photoresist stripping method. Background technique [0002] The FPD is based on various display principles such as LCD, LED, EL, VFD, FED, SED, and PDP, has an electrode structure in which fine wires are arranged, and uses a photoresist in its manufacturing process. For example, in a liquid crystal display, a photoresist is coated on a conductive metal film such as Al, Al alloy, Cu, Cu alloy, or an insulating film such as a SiO2 film formed on a substrate, and then exposed and developed. , form a resist pattern, use the patterned resist as a mask to etch the above-mentioned conductive metal film, insulating film, etc., after forming fine wires, remove the unnecessary resist layer with a stripper, thereby manufacturing liquid crystal monitor. [0003] Photoresist is an essential substance in the photol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/425
Inventor 邓强
Owner SUZHOU HENGKANG NEW MATERIALS