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Polishing process used for passivating surface defects of CsI (TI) crystals

A crystal surface and crystal technology, applied in the field of scintillation crystal surface post-treatment process, can solve the problems affecting the radiation damage resistance, light absorption characteristics/luminescence characteristics, surface scratch damage, etc., to improve the radiation damage resistance, Passivation surface scratches, efficient and stable removal effect

Active Publication Date: 2019-01-25
CAPITAL NORMAL UNIVERSITY +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above measures can improve the macroscopic quality, optical properties and radiation damage resistance of CsI(Tl) crystals to a certain extent, but there are still defects such as surface scratches on the surface of CsI(Tl) crystals, which seriously affect the quality of CsI(Tl) crystals. Radiation damage resistance and light absorption / luminescence characteristics, therefore, there is an urgent need to introduce a new surface defect passivation process that does not introduce secondary pollution

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  • Polishing process used for passivating surface defects of CsI (TI) crystals
  • Polishing process used for passivating surface defects of CsI (TI) crystals
  • Polishing process used for passivating surface defects of CsI (TI) crystals

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with description accompanying drawing and specific preferred embodiment, but does not therefore limit protection scope of the present invention.

[0032] The atmospheric low-temperature plasma gas passivation polisher for CsI (TI) crystal surface defects provided by the present embodiment comprises the steps:

[0033] Step 1, cleaning the surface of the CsI(TI) crystal by soaking the CsI(TI) crystal in acetone.

[0034] Step 2, using filtered clean nitrogen to dry the CsI(TI) crystals cleaned in Step 1.

[0035] Step 3, put the CsI(TI) crystal dried by step 2 into the reaction chamber of the plasma processing equipment. The plasma source provided by the plasma processing equipment is a capacitively coupled radio frequency plasma source, and the torch structure is a coaxial electrode torch structure. The basic structure includes: RF high-frequency generator (13.56MHz, 1.2-1.5kw), internal and external...

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Abstract

The invention discloses a polishing process used for passivating surface defects of CsI (TI) crystals. The process includes the steps of 1, cleaning the CsI (TI) crystals; 2, air-drying the CsI (TI) crystals; 3, placing the CsI (TI) crystals into a reaction chamber of plasma gas processing equipment; 4, utilizing the plasma gas processing equipment to process the CsI (TI) crystals, wherein heliumand mixed gas of sulfur hexafluoride and carbon tetrafluoride are introduced into the plasma gas processing equipment and form plasma gas, and the plasma gas is sprayed onto the surfaces of the CsI (TI) crystals; 5 returning to step 4 and circularly processing the CsI (TI) crystals which are already processed; 6, drying the CsI (TI) crystals processed in step 5 and placing the crystals into a drying box. By means of the process, on the premise of ensuring the surface figure precision and surface roughness, the surface materials of the CsI (TI) crystals are efficiently and stably removed, surface scratches are passivated, and therefore the anti-irradiation damage capability of the CsI (TI) crystals is effectively improved.

Description

technical field [0001] The invention relates to a surface post-treatment process of scintillation crystals, in particular to a polishing process for passivating surface defects of CsI(TI) crystals. Background technique [0002] CsI(TI) crystal (full name in Chinese: "thallium-doped cesium iodide crystal") is a typical inorganic scintillation crystal, which emits ultraviolet or visible light after absorbing the energy of X-rays, γ-rays or other high-energy particles. Among them, the performance of CsI(TI) crystal is more outstanding. The emission spectrum of CsI(TI) crystals can match that of silicon photodiodes, the irradiation length is shorter than that of NaI(Tl) crystals, the mechanical properties are good, the light yield of CsI(Tl) crystals is high, and the production cost is relatively low. Therefore, CsI(TI) crystal is an excellent and practical scintillation crystal material, especially suitable for the detection of medium and low energy particles, and is widely us...

Claims

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Application Information

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IPC IPC(8): B24B1/00
Inventor 朱溢佞张慧滔张朋翟慕岳王姗姗
Owner CAPITAL NORMAL UNIVERSITY