Tubular LPCVD (Low Pressure Chemical Vapor Deposition) vacuum reaction chamber

Abstract

The invention discloses a tubular LPCVD (Low Pressure Chemical Vapor Deposition) vacuum reaction chamber. The tubular LPCVD vacuum reaction chamber comprises a furnace door, a front flange, a front support flange, a front sealing assembly, a heating furnace body, a back support flange, a back sealing assembly, an end flange, an inner quartz tube and an outer quartz tube, wherein the heating furnace body sleeves the outer quartz tube, the front support flange and the back support flange are respectively located on the outer tube wall of both ends of the outer quartz tube, the front support flange, the heating furnace body and the back support flange are fixedly arranged, the furnace door is connected with the front flange, the front flange covers the front end openings of the inner and outer quartz tubes, the front flange is connected with the outer quartz tube by virtue of the front sealing assembly, the front sealing assembly is fixed to the front support flange, the end flange is arranged on the back ends of the inner and outer quartz tubes, the end flange is connected with the outer and inner quartz tubes by virtue of the back sealing assembly, and the back sealing assembly is fixed to the back support flange. The tubular LPCVD vacuum reaction chamber has the advantages of simplicity and rapidity in disassembly and maintenance and obvious economic benefits, and the maintenance time is shortened.

Description

technical field [0001] The invention relates to LPCVD (low-pressure chemical vapor deposition) equipment, in particular to a tube-type LPCVD vacuum reaction chamber. Background technique [0002] LPCVD (Low Pressure Chemical Vapor Deposition, Low Pressure Chemical Vapor Deposition) equipment is a chemical vapor deposition (CVD) equipment that generates a solid reactant through a chemical reaction of a mixed gas under low pressure and high temperature conditions and deposits it on the surface of a silicon wafer to form a thin film. One of them is mainly used in industries such as integrated circuits, power electronics, photovoltaics, and micro-electromechanical systems. In the photovoltaic industry, LPCVD is mainly used in the growth and deposition of polysilicon, amorphous silicon, SiO2, Si3N4, phosphosilicate glass (PSG) and boron-doped phosphosilicate glass (BPSG) and other thin films. As a kind of CVD equipment, its most important function or ultimate goal is still CVD r...

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Problems solved by technology

[0003] At present, the vacuum reaction chamber is a single-layer quartz tube. First, when the polysilicon film is deposited on the inner wall of the single-layer quartz tube to a certain thickness, when there is a sudden power failure or cooling maintenance, the inner wall of the quartz tube is covered with polysilicon. Cracks will occur, making the quartz tube scrapped, the service life of the quartz tube is very low, and it is extremely cumbersome to replace the quartz tube, and the reaction chamber needs to be re-sealed and installed

Secondly, the single-layer quartz tube adopts single-layer water-cooled flanges before and after, the cooling effect of the single-layer water-cooled flange is poor, and the sealing ring is easy to age and cause air leakage

Thirdly, the air inlet is usually designed with a 3 / 8' stainless steel round pipe extending into the reaction chamber at the furnace mouth, and the depth is about 100mm. When the gas in the inlet pipeline enters the reaction chamber, due to the The sharp expansion of the cross-sectional area makes the gas flow unstable, which in turn affects the film uniformity of the silicon wafer near the furnace mouth. The performance of the film is inconsistent, which affects the process quality of the film

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