Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A heat treatment furnace for rocking synthesis of CdZnTe polycrystalline materials

A technology of heat treatment furnace and cadmium zinc telluride, which is applied in the field of infrared detectors, can solve the problems of crystal material explosion and easy generation of holes, etc., and achieve the effects of suppressing holes, strong temperature field adjustment, and improving swing synthesis efficiency

Active Publication Date: 2020-10-23
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a heat treatment furnace for rocking synthesis of cadmium zinc telluride polycrystalline material, in order to solve the problem that the existing rocking synthesis furnace with single temperature zone tends to cause the crystal material to explode or produce holes when the temperature rises and falls

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A heat treatment furnace for rocking synthesis of CdZnTe polycrystalline materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In order to solve the problem that the existing rocking synthesis furnace with single temperature zone tends to cause the crystal material to explode or produce holes when the temperature rises and falls, the present invention provides a heat treatment furnace for swinging synthesis of CdZnTe polycrystalline material. The structure of two temperature zones makes the temperature field more adjustable and can generate a certain temperature gradient. When swinging, a certain temperature gradient in the melt is conducive to melt convection, and the components are mixed more uniformly; when the temperature is lowered, a certain temperature gradient increases the crystallization driving force, effectively suppressing the hole problem of the synthesized polycrystalline material. During the swinging process of the ampoule, the compression degree of each part inside the furnace can be adjusted through the positioning nut, so that the horizontal swing range of the ampoule is ≥30°,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thermal treatment furnace for Te-Zn-Cd polycrystalline material swing synthesis. According to the thermal treatment furnace, a two-temperature-area heating structure is arranged, so that the adjusting function of a thermal field is stronger, and certain temperature gradient can be produced; during swinging, internal melt components are mixed more uniformly, and during cooling, the hole problem of a synthesized polycrystalline material is effectively suppressed. With the adoption of the structure for compacting a quartz ampoule in the axial direction of a furnace tube,the quartz ampoule cannot shake when the furnace body swings horizontally with a large angle, and the swing synthesis effect and synthesis efficiency are improved. Besides, a hole is formed in the axial direction of a structural part on one side of the head part of the ampoule and allows insertion of a monitoring thermocouple, and the monitoring thermocouple is used for adjusting and measuring temperature in the early stage of installation of a furnace hearth and monitoring internal temperature during swing synthesis.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a heat treatment furnace for rocking synthesis of CdZnTe polycrystalline material. Background technique [0002] The synthesis of CdZnTe raw material is a key step in the crystal growth process. Generally, raw materials for cadmium zinc telluride crystal synthesis are packaged in fumed quartz ampoules. It is difficult to mix the single raw material evenly when it is put in as a solid block. There are local cadmium-rich, tellurium-rich, and zinc-rich situations in the synthesis reaction process. If the ingot synthesized by this reaction is directly used for crystal growth, the problem of local high content of certain elemental components will continue to exist in the subsequent crystal growth process, and it is easy to cause typical defects such as inclusions and dislocations inside the crystal. , thereby reducing the crystal quality. Therefore, heating the synthetic ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B28/06
CPCC30B28/06C30B29/48
Inventor 刘江高徐强强范叶霞吴卿
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com