Fabrication method of light-emitting diode epitaxial wafer and epitaxial wafer

Abstract

The invention discloses a fabrication method of a light-emitting diode epitaxial wafer and the epitaxial wafer, and belongs to the technical field of light-emitting diodes. A gallium source can be introduced into a reaction cavity when an InGaN / GaN periodic structure is grown, the gallium source reacts with NH3 to grow GaN, H2 reversely reacts with methane so that the InGaN / GaN periodic structureis grown under a mixed gas of N2 and NH3. Compared with the prior art that the InGaN / GaN periodic structure is grown under the mixed gas of the N2, the NH3 and H2, the fabrication method has the advantages that the H2 is prevented from being introduced into the reaction cavity, the reaction of the gallium source and the NH3 is further promoted, more carbon atoms in the gallium source can be separated from the InGaN / GaN periodic structure in a methane form, the carbon atoms in the InGaN / GaN periodic structure are reduced, a defect source in the InGaN / GaN periodic structure is further reduced, defects in a crystal of the InGaN / GaN periodic structure are reduced, the whole crystal quality of the light-emitting diode is improved, and the luminous efficiency of the light-emitting diode is improved.

Description

Technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a method for preparing an epitaxial wafer of a light-emitting diode and an epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, light emitting diode) has the advantages of small size, long life, low power consumption, etc., and is currently widely used in automobile signal lights, traffic lights, display screens and lighting equipment. [0003] Existing LED epitaxial wafers mainly include a substrate and an n-type GaN layer, a stress release layer, a light-emitting layer, and a p-type GaN layer sequentially stacked on the substrate. The stress release layer is usually used to release the stress in the epitaxial layer , Play a role in reducing defects in the epitaxial layer, the stress relief layer is usually InGaN / GaN periodic structure. [0004] When the existing periodic structure of InGaN / GaN reflects the growth in the cavity, it is usually in N 2 , ...

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Problems solved by technology

[0004] The existing periodic structures of InGaN / GaN are usually grown in N 2 , NH 3 and H 2 The growth is carried out under the mixed gas atmosphere of InGaN / GaN, and because the periodic structure of InGaN / GaN is grown, the gallium source will be introduced into the reaction chamber, the gallium source containing carbon atoms and NH 3 The reaction produces GaN, so in N 2 , NH 3 and H 2 There will be certain carbon atoms in the periodic structure of InGaN / GaN grown under the atmosphere of mixed gas, and carbon atoms will become defect sources as impurity atoms, so that there will be certain Defects, the periodic structure of InGaN / GaN has a limited effect on reducing the defects in the epitaxial layer, and the improvement of the luminous efficiency of light-emitting diodes is limited

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