A light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, a carrier adjustment layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the carrier adjustment layer, the active layer, and the P-type semiconductor layer in sequence Laminated on the substrate, the material of the carrier adjustment layer is aluminum indium gallium nitrogen doped with magnesium. In the present invention, an electron blocking layer with a wide band gap is formed by inserting a magnesium-doped AlInGaN layer between the N-type semiconductor layer and the active layer to avoid electron overflow; at the same time, it provides holes to consume electrons and prolongs the active time of electron injection. Layer time; and the built-in electric field formed in the active layer is reduced, and the hole injection efficiency is improved. In summary, inserting a magnesium-doped AlInGaN layer between the N-type semiconductor layer and the active layer can change the distribution of carriers, so that the number of electrons injected into the active layer matches the number of holes, and ultimately improve the LED performance. luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium Nitride (GaN)-based LED devices, as a new type of high-efficiency, environmentally friendly and green solid-state lighting source, are often used in traffic lights, outdoor full-color displays, urban landscape lighting, automotive interior and exterior lights, mobile phone backlights, etc. field. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on ...

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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the problem of mismatching injection of electrons and holes in the prior art

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