Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a carrier adjusting layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the carrier adjusting layer, the active layer and the P-type semiconductor layer are laminated on the substrate in sequence; and the carrier adjusting layer is made from magnesium-doped aluminum-indium-gallium-nitrogen. The magnesium-doped aluminum-indium-gallium-nitrogen layer is inserted between the N-type semiconductor layer and the active layer, and an electronic barrier layer with wide forbidden band is formed, so that electronsare avoided from overflowing; simultaneously, hole consumption electrons are provided, so that the time that the electrons are injected into the active layer is prolonged; and moreover, built-in electric fields formed inside the active layer are reduced, so that the injection efficiency of holes is improved. Above all, the magnesium-doped aluminum-indium-gallium-nitrogen layer is inserted betweenthe N-type semiconductor layer and the active layer, and the distribution of carriers can be changed, so that the quantity of electrons injected into the active layer is matched with hole quantity, and finally the light-emitting efficiency of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium Nitride (GaN)-based LED devices, as a new type of high-efficiency, environmentally friendly and green solid-state lighting source, are often used in traffic lights, outdoor full-color displays, urban landscape lighting, automotive interior and exterior lights, mobile phone backlights, etc. field. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on ...

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the problem of mismatching injection of electrons and holes in the prior art

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