Brightness improved LED luminescent layer epitaxial structure and preparation method thereof

An epitaxial structure and light-emitting layer technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as the preparation of epitaxial structures that have not been seen, avoid direct and non-radiative recombination of holes, improve luminous efficiency, The effect of increasing the effective hole concentration

Inactive Publication Date: 2019-02-01
HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quantum barrier is an important structure to protect and improve the quality of the quantum well, and there is no epitaxial structure based on AlInGaN-based reciprocating quantum barriers to improve the brightness of the LED light-emitting layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides a radiation detector based on gallium oxide single crystal, including the following process steps:

[0035] Step 1, select a sapphire pss substrate and put it into the metal organic compound chemical vapor deposition furnace reaction chamber;

[0036] Step 2, heating up to 500°C, growing a Buffer buffer layer with a thickness of 50nm;

[0037] Step 3: Raise the temperature to 1100°C, grow a high-temperature U-shaped GaN layer with a growth thickness of 1.5um, control the growth pressure at 800Torr, and control the V / III molar ratio at 2000-2200;

[0038] Step 4, the temperature is controlled at 1000°C, and a layer of N-type GaN layer with stable doping concentration is grown. The growth thickness of the N-type GaN layer is controlled at 2.5um, the growth pressure is controlled at 600 Torr, and the V / III molar ratio is controlled at 1500 Between -1700;

[0039] Step 5, adjust the temperature to 800°C, and grow the quantum well stress release la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a brightness improved LED luminescent layer epitaxial structure and a preparation method thereof, and belongs to the technical field of semiconductor device preparation. The brightness improved LED luminescent layer epitaxial structure comprises a substrate layer, a Buffer layer, a U type GaN layer, an N type GaN layer, a quantum well stress releasing layer, an improved brightness increasing LED luminescent layer, a P type AlGaN layer and a P type GaN layer. The improved brightness increasing LED luminescent layer comprises multiple normal quantum well layers, and multiple AlyGa(1-y)N/GaN/AlxGa(1-x)N type quantum barrier layers whose component and thickness are changed gradually in a reciprocal way. The thickness of the GaN layer in the AlyGa(1-y)N/GaN/AlxGa(1-x)Ntype quantum barrier layers is increased and then decreased with increase of the period number of quantum wells, the quantum barrier which is thicker in the middle can reduce the electron migration rate effectively, the number of electrons which cross the barrier is reduced, direct non-irradiation combination with cavities is avoided, and the light emitting efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and relates to an epitaxial structure of a brightness-improving LED light-emitting layer and a preparation method thereof. Background technique [0002] GaN-based nitride, as one of the third-generation wide-bandgap semiconductor materials, has excellent properties such as high temperature resistance, radiation resistance, wide bandgap, breakdown field strength, and high mobility, and has gradually become a hot topic in the development of new-generation power electronic devices. Material. With the great development of group III nitrides in material epitaxy, device design and process, GaN-based power electronic devices are superior to traditional light sources in terms of light efficiency and energy saving, and have gradually become the market leader of power electronic devices. LED applications have shown explosive growth in the general lighting market, and there will be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/86H01L33/00H01L33/06H01L33/12H01L33/32
CPCH01L21/86H01L33/0066H01L33/0075H01L33/06H01L33/12H01L33/32
Inventor 何杰芦玲祝光辉陈明王淑娇吕腾飞
Owner HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap