Light-controlled switch circuit based on molybdenum disulfide transistor

Abstract

The invention discloses a light-controlled switch circuit based on a molybdenum disulfide transistor, which mainly solves a problem that the existing light-controlled switch circuit cannot work in ultralow light intensity. The light-controlled switch circuit based on the molybdenum disulfide transistor comprises a NPN triode Q1, a PNP triode Q2, an LED light emitting tube, the molybdenum disulfidetransistor VT, two voltage dividing resistors, a switch and a power supply. A grid of the VT is connected with an anode of the power supply through a first voltage dividing resistor R1, a drain of the VT is connected with a base of the Q1, a source of the VT is connected with a cathode of the power supply, an emitter of the Q1 is connected with the cathode of the power supply, a collector of theQ1 is connected with the base of the Q2 and is further connected with the anode of the power supply through a second voltage dividing resistor R2, the emitter of the Q2 is connected with the anode ofthe power supply, the collector of the Q2 is connected with the cathode of the power supply through the LED, and the switch is connected with the power supply in series. By utilization of the molybdenum disulfide transistor, sensitivity of the light-controlled switch circuit is improved, the light-controlled switch circuit can detect light of ultralow intensity, can work under conditions of very small current and very low voltage, and can be used for a photoelectric integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, in particular to an optical control switch, which can be used to control the on-off of circuits in photoelectric integrated circuits. Background technique [0002] A photodetector is a photoelectric device that can convert light signals into detectable electrical signals. Devices that can detect light signals are widely used in various fields, including quantum communication, cryptography, military, astronomy, industry and consumer electronics, etc. . The simplest photodetector is a photoconductive device with two electrodes. Its working principle can be summarized as that under illumination, semiconductor materials can absorb photons well to generate electron-hole pairs. Under the action of an external electric field, the two current-carrying The electrons flow into the corresponding electrodes respectively, thereby generating a photocurrent several orders of magnitude larger than t...

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Problems solved by technology

But phototransistors of this material are not suitable for detection in the visible range

There is another material, GaSe, which has an indirect bandgap of 2.11eV and a slightly narrower bandgap. Although it can be detected in the range of visible light, the photocurrent is very small, and it is only suitable for detection in the range of ultraviolet light. , its photoresponsivity is 2.8A·W

Its photoresponse range is limited, the responsivity is low in the visible light range, and the photoresponsivity is lower when the light intensity becomes weaker, which limits its use

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