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Method for detecting sapphire wafer defects

A technology of sapphire wafer and detection method, which is applied in the field of sapphire wafer research, can solve problems such as costing a lot of money and unfavorable industrial production, and achieve the effects of reducing detection errors, facilitating implementation, and simple and easy detection methods

Inactive Publication Date: 2019-02-22
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The detection device described in this invention has the advantages of fast detection speed and high detection accuracy when detecting sapphire wafers, but the detection device needs to consume a large amount of funds, which is not conducive to industrial production

Method used

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  • Method for detecting sapphire wafer defects

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Effect test

Embodiment 1

[0035] In the present embodiment, a kind of detection method of sapphire wafer defect is provided, and described detection method comprises:

[0036] (1) 1000 sapphire wafers to be tested are cleaned with a mixture of organic alkali, surfactant and deionized ultrapure water, and dried to obtain a sapphire wafer with a smooth surface;

[0037](2) In a pure water environment, the sapphire wafer with a smooth surface obtained in step (1) is clamped on the fixture with a clamping device, and the position of the sapphire wafer and the light source is adjusted so that the illuminance is 2000Lux and the color of the irradiated light is white LED The soft light is irradiated vertically on the surface of the sapphire wafer with a thickness of 500 μm, and then observed with the naked eye to judge whether the silicon polished wafer is defective.

[0038] figure 1 It is a schematic diagram of the structure of the sapphire wafer detection device in this embodiment, wherein: 1 is a light s...

Embodiment 2

[0042] In the present embodiment, a kind of detection method of sapphire wafer defect is provided, and described detection method comprises:

[0043] (1) 1000 sapphire wafers to be tested are cleaned with a mixture of organic alkali, surfactant and deionized ultrapure water, and dried to obtain a sapphire wafer with a smooth surface;

[0044] (2) In a pure water environment, the sapphire wafer with a smooth surface obtained in step (1) is clamped on the fixture with a clamping device, and the position of the sapphire wafer and the light source is adjusted so that the illuminance is 1500Lux and the color of the irradiated light is a yellow LED The soft light is irradiated vertically on the surface of the sapphire wafer with a thickness of 700 μm, and then observed with the naked eye to judge whether the silicon polished wafer is defective.

[0045] Visual observation: Among the 1000 sapphire wafers to be tested, 66 sapphire wafers had air bubbles, micro-cracks, clouds and growt...

Embodiment 3

[0048] In the present embodiment, a kind of detection method of sapphire wafer defect is provided, and described detection method comprises:

[0049] (1) 1000 sapphire wafers to be tested are cleaned with a mixture of organic alkali, surfactant and deionized ultrapure water, and dried to obtain a sapphire wafer with a smooth surface;

[0050] (2) In a pure water environment, the sapphire wafer with a smooth surface obtained in step (1) is clamped on the fixture with a clamping device, and the position of the sapphire wafer and the light source is adjusted so that the illuminance is 3000 Lux and the color of the irradiated light is yellow. The LED soft light is irradiated vertically on the surface of the sapphire wafer with a thickness of 300 μm, and then observed with the naked eye to judge whether the sapphire wafer is defective.

[0051] Visual observation: Among the 1000 sapphire wafers to be tested, 66 sapphire wafers had air bubbles, micro-cracks, clouds and growth lines,...

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Abstract

The invention provides a method for detecting sapphire wafer defects. The method includes vertically irradiating a pre-cleaned sapphire wafer in a liquid environment with a light source to detect thesapphire wafer defects. The method is simple and practicable, does not require an expensive professional device, and greatly reduces the production cost. The effect is intuitive, and the defects can be directly identified by the naked eyes. The training cost is low, the effect is fast, and the method can be put into use immediately, thereby being suitable for detecting the sapphire wafer defects.

Description

technical field [0001] The invention belongs to the research field of sapphire wafers, and relates to a detection method for defects of sapphire wafers. Background technique [0002] Sapphire crystal has the characteristics of high strength, high melting point, and stable physical and chemical properties. It has been widely used in military, aerospace, optics, biology, analysis, semiconductor substrates, high-speed information processing, and miniaturization and intelligence of electronic photonic devices. Application, its optical transmission range is wide, the refractive index is 1.762-1.770, and the transmittance reaches 85%. Sapphire crystal is currently the most widely used substrate material in the development of the semiconductor lighting industry, and is widely used as an epitaxial substrate material for semiconductor gallium nitride (GaN) light-emitting diodes (LEDs). [0003] CN202661411U provides a kind of sapphire surface defect measurement system, including X-r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/88
CPCG01N21/8803G01N21/8806G01N2021/8809G01N2201/061
Inventor 姜兵兵徐伟沈思情张俊宝陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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