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Method for preparing multiple field plates of power device

A power device and field plate technology, which is applied in the field of preparation of power device multi-field plates, can solve problems such as difficulty in ensuring overlay accuracy, high manufacturing cost, and complicated process flow, so as to shorten processing time, improve processing efficiency, and simplify the process. The effect of the process

Inactive Publication Date: 2019-02-22
大连芯冠科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are a series of problems such as complex process flow, time-consuming production, high manufacturing cost and difficulty in ensuring overlay accuracy

Method used

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  • Method for preparing multiple field plates of power device
  • Method for preparing multiple field plates of power device
  • Method for preparing multiple field plates of power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The preparation method of a kind of power device multi-field plate of the present invention is as follows figure 1 As shown, follow the steps below:

[0020] a. Prepare dielectric layer 1 on the substrate:

[0021] Same as the prior art, use methods such as PECVD or ALD to prepare a dielectric layer of 100nm~2μm, such as silicon oxide, silicon nitride, etc.

[0022] b. Coating photoresist layer 2 on dielectric layer 1:

[0023] Same as the prior art, a photoresist, such as SPR220-3 photoresist, is coated on the dielectric layer 1 using a positive resist process to form a photoresist layer 2 with a thickness of 1-10 μm.

[0024] c. Divide the photoresist layer 2 into regions successively and control the exposure time of each region: the first division of regions such as figure 2 As shown in A, use the existing photolithography plate, use the Stepper machine to align the area and expose it for 0.05~2 seconds, so that the upper layer of the photoresist layer 2 forms a ...

Embodiment 2

[0030] The preparation method of a kind of power device multi-field plate of the present invention is as follows figure 1 As shown, follow the steps below:

[0031] a. Prepare dielectric layer 1 on the substrate:

[0032] Same as the prior art, use methods such as PECVD or ALD to prepare a dielectric layer of 100nm~2μm, such as silicon oxide, silicon nitride, etc.

[0033] b. Coating photoresist layer 2 on dielectric layer 1:

[0034] Same as the prior art, a photoresist, such as SPR220-3 photoresist, is coated on the dielectric layer 1 using a positive resist process to form a photoresist layer 2 with a thickness of 3 μm.

[0035] c. Divide the photoresist layer 2 into regions successively and control the exposure time of each region: the first division of regions such as image 3 As shown in A, use the existing photolithography plate, use the Stepper machine to align the area and then expose for 0.05 to 2 seconds, so that the upper layer of the photoresist layer 2 forms t...

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Abstract

The invention discloses a method for preparing multiple field plates of a power device, wherein the method can achieve a simple process flow, low cost, high efficiency and ensure processing precision.The difference of the method from the prior art comprises successively dividing a photoresist layer into regions and controlling the exposure time of each region such that the photoresist layer is divided into a fully exposed region, an incompletely exposed region, and an unexposed region in a horizontal direction; wherein the fully exposed region is located in a middle portion, both sides of thefully exposed region are connected to, from bottom to top, the inner side of the incompletely exposed region, the upper surface of the incompletely exposed region, and the unexposed region, and the interfaces are in continuous step shapes; controlling the development time in order that the completely exposed region of the photoresist layer is dissolved in a developing solution and the incompletely exposed region and the unexposed region are maintained; performing etching until a plurality of field plate steps are formed on a dielectric layer.

Description

technical field [0001] The invention relates to a preparation method of a power device, in particular to a preparation method of a power device multi-field plate with simple process flow, low cost, high efficiency and guaranteed machining accuracy. Background technique [0002] As a representative of the third-generation semiconductor material after the first-generation semiconductor silicon (Si) and the second-generation semiconductor gallium arsenide (GaAs), gallium nitride (GaN) has many excellent material properties, such as wide band gap, high temperature resistance , high electron concentration, high electron mobility, high thermal conductivity and so on. Therefore, GaN-based high electron mobility transistors (HEMTs) have excellent performance in the fields of microwave communication and power electronic conversion, and are especially suitable for manufacturing high-power electronic devices. [0003] GaN power devices belong to a planar channel field effect transisto...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/027
CPCH01L21/0274H01L29/401H01L29/404
Inventor 任永硕王荣华梁辉南高珺
Owner 大连芯冠科技有限公司