Preparation method of photocorrosion resistance titanium dioxide/cadmium selenide/graphene composite film

A graphene film and titanium dioxide technology, which can be used in the plating of superimposed layers, electrolytic inorganic material plating, electrolytic coatings, etc., and can solve problems such as practical application limitations.

Inactive Publication Date: 2019-03-01
TAIYUAN UNIV OF TECH
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Problems solved by technology

Due to the photocorrosion problem of CdSe, the practical application of titanium dioxide / cadmium selenide composites is greatly limited

Method used

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  • Preparation method of photocorrosion resistance titanium dioxide/cadmium selenide/graphene composite film
  • Preparation method of photocorrosion resistance titanium dioxide/cadmium selenide/graphene composite film
  • Preparation method of photocorrosion resistance titanium dioxide/cadmium selenide/graphene composite film

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Embodiment Construction

[0078] The present invention will be further described below in conjunction with accompanying drawing:

[0079] figure 1 As shown, in order to prepare the state diagram of titanium dioxide / cadmium selenide thin film, the position and connection relationship of each part must be correct, and the ratio should be adjusted according to the amount, and the operations should be performed in sequence.

[0080] Quantities of the chemical substances used in the preparation are determined according to a preset range, with grams, milliliters, and millimeters as measurement units.

[0081] The preparation of titanium dioxide / cadmium selenide film is carried out in the electrolytic cell, based on titanium sheet TiO 2 The nanotube array film is the working electrode, the platinum sheet is the counter electrode, and the calomel sheet is the reference electrode. 2 CdSe is deposited on the nanotube array film to form a titanium dioxide / cadmium selenide film;

[0082] The electrolytic cell 6...

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Abstract

The invention relates to a preparation method of a photocorrosion resistance titanium dioxide/cadmium selenide/graphene composite film. The preparation method of the photocorrosion resistance titaniumdioxide/cadmium selenide/graphene composite film comprises the following steps that a TiO2 nanotube film is prepared on a titanium sheet by an anodic oxidation method according to the excellent electrical conductivity and optical performance of graphene; a titanium dioxide/cadmium selenide film is prepared by an electrochemical method; and spin-coating is carried out on the titanium dioxide/cadmium selenide film to prepare a titanium dioxide/cadmium selenide/graphene film, wherein the product is a dark red film, the film is composed of TiO2 nanotubes, the nanotubes are uniform and compact, the arrangement is neat, the pipe diameter is less than or equal to 100 nm, CdSe particles are in a nanosphere shape, and the particle diameter is less than or equal to 20 nm. The graphene film is attached to the upper part of the CdSe nanoparticles. Photocurrent of 0.2 mA/cm<2> is generated under visible light irradiation, and the attenuation speed of the electrode covered with the graphene is slow, so that the graphene plays a role in photocorrosion resistance and is used in photovoltaic products.

Description

technical field [0001] The invention relates to a preparation method of a light-resistant titanium dioxide / cadmium selenide / graphene film, belonging to the technical field of preparation and application of inorganic functional materials. Background technique [0002] As a renewable and clean energy, solar energy is the first choice to solve energy shortage and environmental pollution. Using conversion materials, solar energy can be converted into electrical energy and chemical energy. TiO 2 Stable and non-toxic, it is widely used in solar cells, photocatalysis and other fields. But TiO 2 The wide bandgap, low utilization of solar energy, and rapid recombination of photogenerated electrons and holes limit its practical application. TiO 2 Coupled with a narrow bandgap semiconductor is TiO 2 It is an effective method of modification. On the one hand, compounding semiconductors will reduce the band gap, and on the other hand, the energy level structure after compounding is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/26C25D9/04C23C28/04
CPCC23C28/042C25D9/04C25D11/26
Inventor 薛晋波申倩倩王羿高国翔张伟贾虎生
Owner TAIYUAN UNIV OF TECH
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