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A Method for Fabricating Thin Film Structure Using Oblique Evaporation

A technology of thin film structure and column structure, which is used in vacuum evaporation coating, metal material coating process, coating and other directions, can solve the problem that the processing of any shape film structure cannot be fully realized, the upper end of the thin film structure cannot be patterned, and it is difficult to realize the side surface. Thin-film evaporation, etc.

Active Publication Date: 2021-01-26
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1. The vertical evaporation method can only process the coated structure, and it is difficult to achieve specific micro-nano shape and evaporation of side films with controllable parameters;
[0006] 2. The ordinary oblique evaporation process cannot solve the problem that the side wall of the micro-nano column near the top (including the edge of the top surface of the column) will be exposed to the evaporation beam and be evaporated to metal, so it is also impossible to achieve the upper end of the thin film structure. Patterning, so that the processing of membrane structures with arbitrary shapes on the sidewall cannot be fully realized

Method used

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  • A Method for Fabricating Thin Film Structure Using Oblique Evaporation
  • A Method for Fabricating Thin Film Structure Using Oblique Evaporation
  • A Method for Fabricating Thin Film Structure Using Oblique Evaporation

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Embodiment 1

[0036] As a most basic embodiment of the present invention, such as Figures 1 to 7 , discloses a method for processing a thin film structure using oblique evaporation, comprising the following steps:

[0037] A cleaning step, cleaning the substrate with the micro-nano column structure;

[0038]Coating step: Spin-coat a layer of photoresist I that can be exposed by low-dose electron beams on the substrate after the cleaning step, then bake to coat the photoresist I on the surface of the substrate, and then spin-coat a layer of The photoresist II that can be exposed by high-dose electron beams is then baked to cover the photoresist II on the surface of the photoresist I; baking is a standard treatment method, which is intended to evaporate the solvent of the glue and lose its fluidity after curing , to ensure the stability of the mask structure; and the dose here is the exposure dose, which refers to the total charge of the electrons irradiated on the unit area during the expo...

Embodiment 2

[0044] As a preferred embodiment of the present invention, such as Figures 1 to 7 , discloses a method for processing a thin film structure using oblique evaporation, comprising the following steps:

[0045] In the cleaning step, use acetone, isopropanol and deionized water to clean the substrate for 5 minutes in an ultrasonic state to clean the substrate with a micro-nano column structure. The substrate is Si / SiO with a square micro-nano column structure. 2 Substrate;

[0046] Coating step: Spin-coat a layer of photoresist I that can be exposed by low-dose electron beams on the substrate after the cleaning step, then bake to coat the photoresist I on the surface of the substrate, and then spin-coat a layer of The photoresist II that can be exposed by high-dose electron beams is then baked so that the photoresist II covers the surface of the photoresist I; After exposure, it can be dissolved by the same developer to complete the development. Preferably, photoresist I is PMM...

Embodiment 3

[0052] As a preferred embodiment of the present invention, such as Figures 1 to 7 , discloses a method for processing a thin film structure using oblique evaporation, comprising the following steps:

[0053] In this embodiment, a Si / SiO2 substrate is used, on which a square micro-nano column structure is processed, and the height of the column is H. Use acetone, isopropanol, and deionized water to ultrasonically clean the substrate for 5 minutes in sequence;

[0054] Such as figure 1 , first spin-coat a layer of PMMA / MAA electron beam photoresist with a thickness of h1 on the substrate for baking, and then spin-coat a layer of PMMA electron beam photoresist with a thickness of h2 for baking . When exposed by an electron beam of 100kV, the sensitivity of PMMA is 3 times lower than that of PMMA / MAA, and a 3 times higher dose is required for exposure, such as figure 1 As shown on the left, the left side represents a high exposure dose, the right side has a low exposure dose, ...

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Abstract

The invention discloses a method for processing a thin film structure by using oblique evaporation. The invention belongs to the technical field of thin film structure processing and includes a cleaning step, a glue coating step, an exposure step, a developing step, a film coating step and a peeling step. A method for processing thin film structures to realize the evaporation of side films with specific micro-nano dimensions and controllable parameters, and a method for evaporating micro-nano column side film structures that meet actual needs.

Description

technical field [0001] The invention belongs to the technical field of thin film structure processing, and in particular relates to a method for processing thin film structures by oblique evaporation. Background technique [0002] The rapid advancement of semiconductor technology has brought about the development of chip, MEMS and other industries. More and more functional structures are integrated per unit area and unit volume, and the processing and manufacturing of smaller structures is the pursuit of the entire semiconductor process field. [0003] The three-dimensional structure processing of micro-nano devices is an effective way to achieve device volume compression. At present, the commonly used technical solutions are to grow a specific multi-layer three-dimensional column structure through epitaxy, or to etch the epitaxial layer through top-down design to form the required columnar structure, and then integrate specific functional structures on the multi-layer colum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/04
CPCC23C14/042C23C14/226C23C14/24
Inventor 王文杰李舒啸谢武泽安宁李倩曾建平
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS