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Coupling structure of SiON waveguide and optical fiber and manufacturing method of structure

A technology of optical fiber coupling and manufacturing method, which is applied in the coupling of optical waveguide, optical guide, optics, etc., can solve the problem of large coupling loss between SiON waveguide and optical fiber, and achieve the purpose of expanding the size of optical mode field, reducing dispersion loss, and improving confinement ability Effect

Inactive Publication Date: 2019-03-08
科新网通科技有限公司
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] One of the purposes of the present invention is to provide a SiON waveguide and optical fiber coupling structure to solve the technical problem of large coupling loss between SiON waveguide and optical fiber existing in the prior art

Method used

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  • Coupling structure of SiON waveguide and optical fiber and manufacturing method of structure
  • Coupling structure of SiON waveguide and optical fiber and manufacturing method of structure
  • Coupling structure of SiON waveguide and optical fiber and manufacturing method of structure

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Embodiment 1

[0044] SiON waveguide and fiber coupling structure of the present invention, such as figure 2 with image 3 As shown, it includes SiON waveguide 201, which is an input waveguide; silicon dioxide waveguide 202, which is coated on the outside of SiON waveguide 201; tapered SiON waveguide 203201, which is coated on the inside of silicon dioxide waveguide 202, and is at the level of SiON waveguide 201 and the cross-sectional dimension is smaller than that of the SiON waveguide 201, and the cross-sectional dimension gradually expands along the direction of light transmission; the SiON output waveguide 204 is connected to the tapered SiON waveguide 203201.

[0045] Wherein, the SiON waveguide 201 is located where the symmetry axis of the silica waveguide 202 is located. The tapered SiON waveguide 203201 is located where the axis of symmetry of the silica waveguide 202 is located. The silicon dioxide waveguide 202 has a rectangular cross-section and is composed of a buried oxide l...

Embodiment 2

[0053] For the manufacture of the reverse tapered pattern converter, we used an SOI wafer with a top layer silicon thickness of 340nm and a BOX layer thickness of 2μm. The whole process of making is as follows:

[0054] S1: After the RCA process, clean the SOI wafer;

[0055] S2: Spin-coat the PMMA photoresist on the SOI wafer at a speed of 4000 rpm and a thickness of 220nm;

[0056] S3: Use Raith150 electron beam exposure machine, and after developing and fixing, make tapered structure, waveguide structure and mask patterns of alignment marks used in ordinary lithography overlay;

[0057] S4: Using ICP etching technology, transfer the mask pattern to the SOI wafer, and etch for 50s under shallow2LR3 etching conditions;

[0058] S5: Use the plasma glue machine to remove the residual glue, and clean the SOI wafer with RCA;

[0059] S6: cover a layer of SiON capping layer with PECVD, the refractive index is 1.7, and the thickness is 3 μm;

[0060] S7: Spin-coat photoresist o...

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Abstract

The invention provides a coupling structure of a SiON waveguide and an optical fiber and a manufacturing method of the coupling structure of the SiON waveguide and the optical fiber. The structure comprises the SiON waveguide serving as an input waveguide, a silicon dioxide waveguide wrapped around the outer side of the SiON waveguide, a tapered SiON waveguide and a SiON output waveguide. The tapered SiON waveguide is wrapped around the inner side of the silicon dioxide waveguide and positioned below the horizontal plane of the SiON waveguide; the size of the cross section of the tapered SiONwaveguide is smaller than that of the SiON waveguide and is gradually enlarged in a light transmission direction; the SiON output waveguide is connected with the tapered SiON waveguide. According to the structure, the SiON waveguide is coated with a layer of SiO2, so that the structure is separated from air, and a protective effect is achieved. The SiON waveguide and the tapered SiON waveguide have different refractive indexes; the SiON waveguide can be matched with the optical fiber; the tapered SiON waveguide can be small in size; through the coupling structure, a device can be made small, and the energy consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of optical fiber communication, in particular to a SiON waveguide and optical fiber coupling structure and a manufacturing method thereof. Background technique [0002] With the continuous and rapid development of silicon-based photonic chip integration technology, the use of photonic chips to realize short-distance optical communication between chips or within chips is getting closer and closer to reality. Silicon on Insulator (SilicononInsulator, SOI) has very good optical properties, and because silicon and SiO 2 Or air has a very large refractive index difference, and silicon-based optical waveguides have a strong ability to confine light fields, so silicon-based optical waveguides can be made into very small sizes, usually with a cross-sectional size of less than 1 μm. While the very small-sized silicon waveguide brings high device integration, it also brings a serious problem-the coupling loss between...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/26G02B6/138G02B6/136G02B6/132
CPCG02B6/132G02B6/136G02B6/138G02B6/262
Inventor 袁晓君耿凯鸽
Owner 科新网通科技有限公司
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