Light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. A multi-quantum-well layer of the light emitting diode epitaxial wafer is of a multi-cycle superlattice structure, wherein each superlattice structure comprises an InGaN quantum well layer, and a transition layer and a GaN quantum barrier layer which are sequentially stacked on the InGaN quantum well layer; the transition layer comprises a first sub-layer and a second sub-layer arranged on the first sub-layer, wherein the first sub-layer is anAlInN layer, and the second sub-layer is an AlGaN layer. The AlInN material is relatively matched with the InGaN material lattice, the AlGaN material is relatively matched with the crystal lattice ofthe GaN material, and the AlInN material is relatively matched with the lattice of the GaN material, so that the lattice mismatch between the InGaN quantum well layer and the GaN quantum barrier layer can be reduced by arranging the first sub-layer and the second sub-layer, and therefore the defects are reduced, and the radiation composite luminescence efficiency of electrons and holes in the multi-quantum well layer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an undoped GaN layer, an N-type layer, a multi-quantum well layer and a P-type layer. layer. The N-type layer is doped with Si to provide electrons, and the P-type layer is doped with Mg to provide holes. When the current is injected into the GaN-...

AI Technical Summary

Problems solved by technology

[0005] Since the multi-quantum well layer is composed of InGaN quantum well layers and GaN quantum barrier layers alternately arranged in multiple periods, the InGaN quantum well layers and GaN quantum barrier layers will generate stress due to lattice mismatch. The period of the layer continues to increase, and the stress between the quantum well layer and the quantum barrier layer continues to accumulate. Some linear dislocations in the GaN epitaxial layer will develop and amplify during the quantum well growth process, forming V-shaped defects, thereby reducing the electron density. The efficiency of radiative recombination luminescence with holes in the multi-quantum well layer

At the same time, the InGaN quantum well layer and the GaN quantum barrier layer will produce a piezoelectric polarization effect due to lattice mismatch, resulting in the separation of the wave functions of electrons and holes in space, thereby reducing the luminous efficiency of LEDs.

Images