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A kind of preparation method of si-al electronic packaging material

An electronic packaging material, si-al technology, applied in the field of alloys, can solve the problems of complex production process, low tensile strength, coarse structure, etc., and achieve the effects of simple preparation process, improved billet performance, and easy operation.

Active Publication Date: 2021-02-05
CHINA WEAPON SCI ACADEMY NINGBO BRANCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the Chinese invention patent with the patent application number of 200610031906.5 "Preparation process of high-silicon aluminum alloy electronic packaging materials", the Chinese invention patent with the patent application number of 200710303659.4 "A liquid phase sintering method of spray-formed silicon aluminum alloy electronic packaging materials", the patent Application No. 200810236490.X Chinese Invention Patent "Preparation Method of Aluminum-Silicon Alloy with High Silicon Content", etc., the silicon-aluminum alloy prepared in the above-mentioned documents, especially the structure with a Si content of more than 40%, is coarse and has a high tensile strength. The strength is low, and the production process is complicated and the cost is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh 30kg of pure silicon and 70kg of pure aluminum respectively, put the pure aluminum into the bottom of the intermediate frequency furnace, put silicon into the top, and heat with electricity until the aluminum and silicon are all melted into a melt, and the temperature of the melt is raised to 1000°C, and fully stirred , power off and stand still to cool down to 900°C, add 0.6% by weight of Zr-containing modifier; 2 Cl 6 Degassing and refining the silicon-aluminum melt with the refining agent Hongguang Refining Agent HGJ-1A purchased on the market, after which the slag is removed from the melt; the melt is heated to 1000°C and poured into the diversion tank for spray deposition process, the atomization pressure is 0.6-0.8MPa, the atomization temperature is 1000°C-1500°C, the atomization gas is nitrogen, and the deposition distance is 680-710mm. 30% of the ratio is sent to the spray deposition chamber and mixed with atomized droplets for deposition, thereby produci...

Embodiment 2

[0031] Weigh 50kg of pure silicon and 50kg of pure aluminum respectively, and complete the melt treatment according to the steps of Example 1, wherein the temperature of adding the modifier is 1100°C, and the temperature of the melt during the spray deposition process is 1300°C, and the added powder components It is 50Si50Al, and other parameters are unchanged, which is similar and consistent with the implementation example 1. Finally, a 50Si50Al ingot is obtained; ℃ and 100MPa, heat preservation and pressure for 2 hours, then cool with the furnace, take samples for tissue analysis and physical performance testing.

[0032] Spray deposited 50Si50Al alloy adopts the microstructure after hot isostatic pressing after the process of the present invention such as image 3 As shown, it can be seen from the figure that after the process of the present invention is adopted, the structure of the alloy is dense and uniform, there are no defects such as micropores, and there is no primar...

Embodiment 3

[0035]Weigh 75kg of pure silicon and 25kg of pure aluminum respectively, and complete the melt treatment according to the steps of Example 1, wherein the temperature of adding the modifier is 1350°C, and the temperature of the melt during the spray deposition process is 1450°C. 65Si35Al powder is added in the process, and other parameters are unchanged, which is similar to the implementation example 1, and the 70Si30Al billet is finally obtained; after taking the deposited sample, the billet is subjected to hot isostatic pressing process, and the temperature and pressure of hot isostatic pressing 530°C and 130MPa, respectively, heat preservation and pressure for 2 hours, then cool with the furnace, and take samples for tissue analysis and physical performance testing.

[0036] Microstructure of spray deposited 70Si30Al alloy after hot isostatic pressing Figure 4 shown. It can be seen from the figure that after the modification and hot isostatic pressing of the 70Si30Al alloy...

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Abstract

A preparation method of Si-Al electronic packaging material, characterized in that Si-Al powders with different components are sent into the spray deposition atomization cone by using uniaxial powder feeding equipment, and are deposited on the deposition disk together with the atomized melt, Forming a Si-Al electronic packaging material whose Si content meets the design requirements. Compared with the traditional spray deposition technology, the process of the present invention is simple and easy to operate, and the performance of the ingot developed by the spray deposition powder feeding process has been effectively improved, providing more nucleation for the solidification of Si-Al alloy primary silicon At the same time, the nucleation rate of the melt is improved, the temperature of the spray-deposited ingot is reduced, the prepared packaging material has excellent performance, and the size of the primary silicon is small and uniform. The powder feeding process of the present invention is especially suitable for the silicon content of 27%-70 % between silicon and aluminum alloys.

Description

technical field [0001] The invention belongs to the technical field of alloys and relates to a packaging material, in particular to a preparation method of a Si-Al electronic packaging material. Background technique [0002] The ideal packaging material should have a thermal expansion coefficient that matches or is slightly higher than that of typical semiconductor materials such as gallium arsenide and silicon (7~13×10 -6 / K), high thermal conductivity (≥100W / (m K)) and low density (≤3g / cm 3 ). In addition, the packaging material should also have reasonable strength (>130MPa), which can provide sufficient mechanical support for mechanically sensitive components and substrates. In addition, the material should be easy to carry out precision machining and forming, and its minimum wall thickness is about 1mm, and the minimum threaded hole diameter is 1.6mm. [0003] Due to the rapid increase in the integration of integrated circuits, the heat generated by the chip rises ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/02C22C21/02C22C1/06C01B33/06
CPCC01B33/06C22C1/026C22C1/06C22C21/02
Inventor 章国伟陈伟韩震杜喜望辛海鹰翟景马波马力
Owner CHINA WEAPON SCI ACADEMY NINGBO BRANCH