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Quantum dots, fabrication methods, single photon sources and qleds

A production method and quantum dot technology, applied in the field of optoelectronics, can solve the problems of low luminous efficiency of devices, and achieve the effect of high reliability and stable devices

Active Publication Date: 2020-12-01
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main purpose of this application is to provide a quantum dot, manufacturing method, single photon source and QLED, to solve the problem that the surface ligands of quantum dots in the prior art react with carriers and / or fall off under the condition of electric excitation The problem of low luminous efficiency of the device caused by

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  • Quantum dots, fabrication methods, single photon sources and qleds
  • Quantum dots, fabrication methods, single photon sources and qleds
  • Quantum dots, fabrication methods, single photon sources and qleds

Examples

Experimental program
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Effect test

Embodiment 1

[0066] The fabrication process of quantum dots includes:

[0067] First make the preparation of quantum dots, which are quantum dots with a core-shell structure, specifically red CdSe / CdS core-shell quantum dots. The synthesis process includes:

[0068] Weigh 0.2 mmol of cadmium oxide, 0.6 mmol of stearic acid and 3 mL of ODE, mix them, and heat to 260° C. to dissolve.

[0069] Inject 1mL*0.1mol of selenium powder-ODE suspension into the solution formed in the upward step, and after 8 minutes, inject 0.05mL*0.1mol of selenium powder-ODE suspension every 3 minutes until the CdSe quantum dot grows to the required size (the first exciton absorption peak is at 550nm), the original reaction solution was obtained.

[0070] Purification of CdSe nuclear quantum dots: Take 1 mL of the original reaction solution, add 2 mL of acetone and 0.5 mL of methanol, heat and centrifuge, and pour off the supernatant. Dissolve the precipitate with 1 mL of toluene, add 1 mL of methanol, heat and c...

Embodiment 2

[0077] The difference from Example 1 is that the modifying agent is n-octylamine.

Embodiment 3

[0079] The difference from Example 2 is: the preparation of quantum dots is red CdSe / CdZnS quantum dots, and its synthesis process includes:

[0080] Weigh 0.2 mmol of cadmium oxide, 0.6 mmol of stearic acid and 3 mL of ODE, mix them, and heat to 260° C. to dissolve.

[0081] Inject 1mL*0.1mol of selenium powder-ODE suspension into the solution formed in the upward step, and after 8 minutes, inject 0.05mL*0.1mol of selenium powder-ODE suspension every 3 minutes until the CdSe quantum dot grows to the required size (the first exciton absorption peak is at 550nm), the original reaction solution was obtained.

[0082] Purification of CdSe nuclear quantum dots: Take 1 mL of the original reaction solution, add 2 mL of acetone and 0.5 mL of methanol, heat and centrifuge, and pour off the supernatant. Dissolve the precipitate with 1 mL of toluene, add 1 mL of methanol, heat and centrifuge. This step was repeated 2 times.

[0083] Take 3mmol of zinc acetate, 0.3mmol of cadmium acet...

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Abstract

The present application provides a quantum dot, a manufacturing method, a single photon source and a QLED. The quantum dot includes a quantum dot body and a ligand arranged on the outer surface of the quantum dot body, the ligand includes an electrochemically inert ligand, and the reduction potential of the electrochemically inert ligand is greater than the potential corresponding to the conduction band bottom of the quantum dot body. The oxidation potential of the inert ligand is lower than the potential corresponding to the bottom of the valence band of the quantum dot body, and the electrochemically inert ligand accounts for more than 80% of all ligands on the outer surface of the quantum dot body. Because the quantum dot includes an electrochemically inert ligand, the luminous efficiency is higher, the device is more stable, and the reliability is higher.

Description

technical field [0001] The present application relates to the field of optoelectronics, in particular, to a quantum dot, a manufacturing method, a single photon source and a QLED. Background technique [0002] Quantum dot light-emitting diode (QLED) is an electroluminescent device that uses quantum dots as the light-emitting center. Quantum dots are inorganic semiconductor nanocrystals dispersed in solution and, therefore, can be processed by solution processing. It is generally believed that inorganic semiconductor nanocrystals possess high photochemical stability. Therefore, QLEDs are expected to realize high-performance solution-processed LEDs by combining the advantages of high-efficiency and stable phosphorescent centers and solution processing. Moreover, the emission wavelength of quantum dots is continuously adjustable, the half-maximum width of the emission spectrum is narrow, and the color purity is high, which has unique advantages in the modulation of high color...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02H01L51/50
CPCC09K11/025C09K11/883H10K50/115B82Y20/00B82Y40/00H05B33/14
Inventor 彭笑刚濮超丹金一政
Owner ZHEJIANG UNIV
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