Preparation method of core-shell quantum dots, core-shell quantum dots and quantum dot electrical devices

A technology of core-shell quantum dots and quantum dots is applied in the field of core-shell quantum dot preparation, core-shell quantum dots and quantum dot electrical devices, and can solve the problems of short life and working stability of QLED.

Active Publication Date: 2020-10-23
NANJING TECH CORP LTD
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Problems solved by technology

[0003] The main purpose of the present application is to provide a preparation method of core-shell quantum dots, core-shell quantum dots and quantum dot electroluminescent devices to solve the problems of short life and working stability of QLED in the prior art

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  • Preparation method of core-shell quantum dots, core-shell quantum dots and quantum dot electrical devices
  • Preparation method of core-shell quantum dots, core-shell quantum dots and quantum dot electrical devices
  • Preparation method of core-shell quantum dots, core-shell quantum dots and quantum dot electrical devices

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[0041] As introduced in the background technology, at present, in order to solve the problems of short life and working stability of the above QLED, the present application proposes a method for preparing core-shell quantum dots, including: preparing a solution containing alloy quantum dot cores, purifying the alloy Quantum dot core; the mixed solution that will comprise the shell cationic precursor, carboxylic acid, alloy quantum dot core and solvent is heated for a certain period of time, after passing through the certain period of time, the carboxylic acid present in the above-mentioned mixed solution is free carboxylic acid (with A part of the carboxylic acid is reacted, and the rest is free carboxylic acid), and then add the fatty amine and the shell anion precursor to the mixed solution, and coat the alloy quantum dot core to obtain the core-shell quantum dot, fatty amine and The molar ratio of free carboxylic acid is greater than 2:1; after the reaction is terminated, th...

Embodiment 1

[0085] Example 1: Synthesis of CdSe@CdZnSe / CdZnS quantum dots on the surface of 630nm amine ligands

[0086] (1) Synthesis of CdSe@CdZnSe:

[0087] 1) Cd(Ac 2 ) 2 ﹒ 2H 2 O 26.6mg (0.1mmol), zinc acetate 0.183g (1mmol), oleic acid (OA) 1.12g (4mmol), ODE were weighed in sequence and placed in a 100mL three-necked bottle, and a magnet was added to the three-necked bottle, nitrogen gas , and raise the temperature of the system in the three-necked flask to 160° C., stir with a magnet at a speed of 60 rpm / min, and at the same time pass nitrogen to exhaust air and acetic acid for at least 0.5 h.

[0088] 2) Weigh 20mg of Se powder (0.25mmol), add 0.5mL of TOP, and ultrasonically dissolve it to obtain a Se-TOP solution.

[0089] 3) After the system in the three-necked flask is deoxygenated, the temperature of the system is raised to 305°C, and CdSe quantum dot cores (with UV=580nm, OD=50, 25nmol) are added.

[0090] 4) Inject 1.69 g (6 mmol) of oleylamine (OAm), and inject the ...

Embodiment 247

[0104] Synthesis of CdZnSe / ZnS quantum dots on the surface of the 470nm amine ligand of embodiment 2

[0105] 1) 0.183g ZnAc 2 (1mmol), 1.12g OA (4mmol), and 5g ODE were weighed in turn and placed in a 100mL three-necked flask, and a magnet was added, and the temperature of the system was raised to 160°C under the protection of nitrogen, and then magnetically stirred. 60rpm / min, the time for blowing nitrogen to exhaust air and acetic acid is at least 0.5h;

[0106] 2) After the system is deoxygenated, add 2.82g (10mmol) of oleylamine (OAm) to the purified CdZnSe quantum dot solution (CdZnSe, UV=478nm, OD=50, 25nmol);

[0107] 3) Wait until the temperature rises to 300 ℃ 0.2M S-ODE was added dropwise at a rate of 30mL / h for a total of 20min, and then the reaction was terminated. Samples were taken every 5min to monitor the PL and the half-peak width. The final PL of CdZnSe / ZnS quantum dots was 470nm, half The peak width is 20nm, and the QY is 97.1%;

[0108] 4) Remove the h...

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Abstract

The present application provides a method for preparing core-shell quantum dots, core-shell quantum dots and quantum dot electroluminescent devices. The core-shell quantum dot preparation method includes: preparing a solution containing alloy quantum dot cores, purifying the alloy quantum dot cores; heating the mixed solution containing shell cation precursors, carboxylic acids, alloy quantum dot cores and solvents for a certain period of time, and After a certain period of time, the carboxylic acid present in the mixed solution is free carboxylic acid. Add fatty amine and shell anion precursor to the mixed solution, and coat the alloy quantum dot core to obtain core-shell quantum dots, fatty amine and free carboxylic acid. The molar ratio of carboxylic acid is greater than 2:1; after the reaction is terminated, the surface of the core-shell quantum dots in the product system includes aliphatic amine ligands, wherein the aliphatic amine ligands account for more than 80% of all ligands on the surface. Since the core-shell quantum dot includes more than 80% of aliphatic amine electrochemically inert ligands, its luminous efficiency and stability are relatively high.

Description

Background technique [0001] Quantum dot light-emitting diode (QLED) is an emerging display technology that is expected to replace the already commercialized organic light-emitting diode (OLED) display technology. In the existing quantum dot electroluminescent device structure, the luminous efficiency of quantum dots will decrease exponentially with the continuation of the lighting time. Therefore, how to improve the lifespan and working stability of QLED will be the core key to solve the current development bottleneck of QLED. [0002] In the existing literature reports, for example, Peng Xiaogang’s research group designed a new device structure independently, and introduced a certain thickness of polymethyl methacrylate (PMMA) in the electron transport layer as a transition layer to balance the electrons and electrons in the device. The hole transport rate can suppress the decay rate of quantum dots in the device to a certain extent, and the external quantum efficiency ( EQ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L51/50
CPCC09K11/02C09K11/883B82Y20/00B82Y30/00B82Y40/00H10K50/115C09K11/0805C09K11/0811C09K11/0816
Inventor 陈小朋赵海洋谢阳腊
Owner NANJING TECH CORP LTD
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