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Inert metal n- type dopant and application thereof to organic electroluminescent devices

A technology of inert metals and dopants, applied in the field of organic electroluminescent devices, can solve the problems of unclear mechanism of action, difficulty in long-term storage and use, unfavorable industrial production, etc., and achieve stable evaporation atmosphere, convenient storage and use , is conducive to the effect of industrial production

Active Publication Date: 2019-03-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this has a certain effect, Ag penetrates into Bphen [4,7-diphenyl-1,10-phenanthroline] or BCP [2,9-dimethyl-4,9-diphenyl-1 ,10-Phenanthroline] has a limited amount and can only form composites at the interface, and the mechanism of action is not clear
Chinese patent CN201110325422.2 discloses to dope ETM with active metal M to achieve n-type doping effect, in which this type of active metal itself has a low work function and directly acts as a strong reducing n-type dopant, and in the air Medium unstable, difficult to store and use for a long time, not conducive to industrial production

Method used

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  • Inert metal n- type dopant and application thereof to organic electroluminescent devices
  • Inert metal n- type dopant and application thereof to organic electroluminescent devices
  • Inert metal n- type dopant and application thereof to organic electroluminescent devices

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preparation example Construction

[0033] The preparation process of the organic electroluminescent device of the present invention is the same as the prior art, wherein the preparation method of the electron transport layer 08 is a conventional vacuum evaporation technique.

[0034] The vapor deposition rate of the metal should be slower, 0.1 angstroms / sec. At this rate, the contact between the host material of the electron transport layer and the compound with the doping material with coordination properties and the inert metal is more sufficient, so that the inert metal M and The ligand Ligand is more uniformly dispersed in the host material ETM, which is conducive to compounding.

Embodiment 1

[0036] Single electronic device structure:

[0037] ITO / Bphen(100nm) / Ag or Au: ETM: Ligand=(1:1:10, 1:1:5, 1:2:5, 1:2:10, 5-100nm) / Al;

[0038] The first electrode layer 02 (anode ITO) / hole blocking layer 07 (Bphen) / electron transport layer 08 (x%M-Ligand-ETM) / the second electrode layer 03 (cathode Al).

[0039] The ETM structure of the host material of the electron transport layer in this embodiment is shown in the following formula (a), and the doped inert metal is Ag or Au.

[0040]

[0041] Such as figure 2 As shown, device 1 is the curve corresponding to ETM / Al, device 2 is the curve corresponding to Ag-ETM-Ligand1 / Al, device 3 is the curve corresponding to Ag-ETM-Ligand2 / Al, and device 4 is Au-ETM-Ligand1 / The curve corresponding to Al, device 5 is the curve corresponding to Au-ETM-Ligand2 / Al, the cathodes of devices 1-5 are all Al, where:

[0042] The electron transport layer 08 of the device 1 is an electron transport material represented by formula (a) (that is, it is not do...

Embodiment 2

[0049] Device structure:

[0050] ITO / HAT-CN(10nm) / NPB(30nm) / Alq 3 (30nm) / Bphen(20nm) / x%M-Ligand-ETM10nm / Ag;

[0051] The first electrode layer 02 (anode ITO), hole injection layer 04 (HAT-CN), hole transport layer 05 (NPB), light emitting layer 06 (Alq 3 ), hole blocking layer 07 (Bphen), electron transport layer 08 (x%M-Ligand-ETM), second electrode layer 03 (cathode Ag).

[0052] The host material of the electron transport layer in this embodiment is TPBI, which has the following structure:

[0053]

[0054] The selection of the host material, doped inert metal and ligand compound of the electron transport layer in this embodiment, as well as the composition ratio x% and doping ratio of the dopant are shown in Table 1 below, and the existing Active metal doping is the control device.

[0055] Table 1 Material selection of each device

[0056] Part number

[0057] It can be seen that the solution of the present invention will dope the n-type dopant with existing conventional electr...

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Abstract

The invention belongs to the technical field of organic electroluminescent devices, particularly relates to an inert metal-based n- type dopant and further discloses an application of the dopant as anelectron transport material dopant and an application of the dopant to the organic electroluminescent devices. The inert metal-based n- type dopant disclosed by the invention comprises an inert metaland a ligand compound with a coordination function. When the dopant is doped into a conventional electron transport host material, the LUMO (Lowest Unoccupied Molecular Orbital) energy level of the electron transport material can be effectively reduced; the injection of electrons is promoted; and therefore, the driving voltage of the devices is significantly reduced and the efficiency of the devices is improved.

Description

Technical field [0001] The invention belongs to the technical field of organic electroluminescence devices, and specifically relates to an inert metal-based n-type dopant, and further discloses its application as an electron transport material dopant and its application in organic electroluminescence devices . Background technique [0002] An organic light emitting diode (OLED) is a device with a multilayer organic thin film structure that can emit light through electroluminescence. It has a variety of display characteristics and qualities that exceed LCD (liquid crystal display). With its excellent characteristics such as low energy consumption and flexibility, it has good application prospects and will become the next generation of mainstream flat panel displays. [0003] In OLED, the LUMO energy level of the commonly used electron transport material (ETM) is around -3.0eV, while the work function of the metal cathode is generally greater than 4.0eV. Therefore, when electrons ar...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/00H10K50/00H10K50/165
Inventor 段炼宾正杨
Owner TSINGHUA UNIV